1.
electron chrome mask
电子束光刻用铬掩模
2.
Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;
介质膜光栅：光刻胶掩模占宽比和离子束刻蚀槽深的监控
3.
electron beam generated mask
电子束技术制造的掩模
4.
electron beam mask generator
电子束掩模图象发生器
5.
electron beam mask system
电子束掩模制造系统
6.
Chrome thin films for hard surface photomasks
GB/T15870-1995硬面光掩模用铬薄膜
7.
raster scan electron beam lithography
光栅扫描电子束光刻
8.
The Chemically Amplified Resist Composition and Its Lithography for Electronic Beam;
化学增幅光刻胶及其在电子束光刻中的应用
9.
The light photons, or bundle of light energy, knock electrons in the chromium atoms.
光子，即光能束，冲击铬原子中的电子。
10.
vector scan electron beam lithography
矢量扫描电子束光刻
11.
direct write electron beam system
直写式电子束光刻装置
12.
Proton beam writing of microstructures on Shanghai SPM system
高能聚焦质子束无掩模刻写方法研究初步
13.
The beam division method in maskless laser interference photolithography can be divided into wave-front division and amplitude division.
无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
14.
raster scan electron beam system
光栅扫描电子束光刻系统
15.
Study on Monte Carlo Simulation of Electron Beam Lithography and Proximity Effect Correction Technique;
电子束光刻的Monte Carlo模拟及邻近效应校正技术研究
16.
Research on Electron Beam Nanolithogrpahy Based on AFM;
基于AFM的电子束纳米级光刻技术研究
17.
Chromium masks last1 o to100 times longer than the emulsion masks.
铬掩模的使用寿命比乳效掩模的长10~00倍.
18.
Chromium masks last 1o to 100 times longer than the emulsion masks.
铬掩模的使用寿命比乳效掩模的长10~100倍.