1.
The most prevalent procedure is to use photolithography or electron-beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer.
最常用的步骤是用光蚀刻或电子束蚀刻法，在矽晶圆表面的光阻层上制作出图案。
2.
Acceptable Error of Etching Depth in Ion Beam Etching Microlens
离子束蚀刻微透镜中蚀刻深度允许误差的研究
3.
Electron-beam lithography with a novel multilevel resist structure defines the pattern.
采用新型的多层抗蚀剂结构的电子束光刻来形成图形。
4.
Generic specification of ion beam etching system
GB/T15861-1995离子束蚀刻机通用技术条件
5.
The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling
离子束刻蚀HgCdTe成结机制分析
6.
vector scan electron beam lithography
矢量扫描电子束光刻
7.
electron chrome mask
电子束光刻用铬掩模
8.
raster scan electron beam lithography
光栅扫描电子束光刻
9.
direct write electron beam system
直写式电子束光刻装置
10.
study on step sidewall tilt in ion beam etching of Fresnel lens
离子束刻蚀过程中台阶侧壁倾斜现象研究
11.
APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY
离子束刻蚀技术在约瑟夫逊器件工艺中的应用
12.
Fabrication of 128×128 Area Silicon Field Emission Arrays Using Ar Ion Beam Etching
128×128元硅场发射阵列的氩离子束刻蚀制作
13.
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction (PartⅡ)
离子束刻蚀HgCdTe环孔pn结Ⅰ—Ⅴ、R_D—V特性的研究(下)
14.
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction
离子束刻蚀HgCdTe环孔pn结Ⅰ-Ⅴ、R_D-V特性的研究(上)
15.
Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;
介质膜光栅：光刻胶掩模占宽比和离子束刻蚀槽深的监控
16.
gas discharge etching
气体放电蚀刻[法]
17.
The Chemically Amplified Resist Composition and Its Lithography for Electronic Beam;
化学增幅光刻胶及其在电子束光刻中的应用
18.
Investigation of Planar and Channel Optical Waveguides Fabricated by Ion Implantation and Ion Beam Etching;
离子注入与离子束刻蚀制备平面和条形光波导的研究