1.
Synthesis of 1,13-diphenyl-4,7,10-trioxa-1,13-diarsacyclooctadecane;
1,13-二苯基-4,7,10-三氧杂-1,13-二砷杂环十八烷的合成
2.
Synthesis and characterization of alkaki·alkaline-earth salts of molybdovanadoarsenic acid;
碱金属碱土金属钼钒砷杂多酸盐的合成与表征
3.
Spectrophotometric Determination of Arsenic in Water by ArsenicStibiumMolybdenum Ternary Heteropolyblus;
砷-锑-钼三元杂多蓝光度法测定水中微量砷
4.
Doping Behavior of Semi-insulating GaAs by Neutron Transmutation;
半绝缘砷化镓中子嬗变掺杂行为研究
5.
Removal of Mo, As, Sb and Sn from tungstate solution
钨酸盐溶液中除钼砷锑锡等杂质的研究
6.
Study on the Impurity and Microdefects in Semi-Insulating Gallium Arsenide Crystals;
半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷
7.
Relationship between doping rare-earth iron oxyarsenides superconductivity and average energy of valence orbit
价层轨道平均能与掺杂铁基砷化物超导电性
8.
Spectrophotometric Determination of Trace Arsenic in Steel by Reducing Arsenic Molybdnum Heteropoly Acid With Gibberellins as New Reducing Agent
用赤霉素作新还原剂还原砷钼杂多酸分光光度法测定钢铁中的微量砷
9.
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
10.
Buried Layer- A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
11.
Determination of Trace As and Se in Complex Matrix Sample by Inductively Coupled Plasma-Mass Spectrometry with O_2 Collision/Reaction Cell
等离子体质谱-氧气碰撞池技术测定复杂基体样品中痕量砷和硒
12.
Electrical and optical properties of single As-doped ZnO nanowire field effect transistors
单根砷掺杂氧化锌纳米线场效应晶体管的电学及光学特性
13.
Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector
砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性
14.
The main unwanted impurities in iron ores include silica and silicates, alumina and aluminares, sulfur, phosphorus and arsenic, and moisture.
铁矿石中的主要无用杂质有硅石和硅酸盐，氧化铝和铝酸盐，硫，磷和砷，以及水分。
15.
Transistors consist of layers of different semiconductors produced by addition of impurities (such as arsenic or Boron) to silicon.
晶体管由不同的半导体层构成,这些半导体是将某些杂质(如砷和硼)加到纯硅中而制成。
16.
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
17.
STUDY ON THE COLOUR REACTION OF THE MULTI- COMPONENT COMPLEXES OF HETEROPOLY ACIDS WITH BASIC DYES--SPECTROPHOTOMETRIC DETERMINATION OF TRACE ARSENIC WITH ETHYL VIOLET
碱性染料杂多酸多元络合物显色反应的研究—乙基紫光度法测定痕量砷
18.
The arsenic group(CH3)2As-.
二甲砷基砷基（CH3）2As－