1.
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T8758-1988砷化镓外延层厚度红外干涉测量方法
2.
Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method
GB/T11068-1989砷化镓外延层载流子浓度电容-电压测量方法
3.
Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)
4.
gallium arsenide ultrared lighting transistor
砷化镓红外发光晶体管
5.
galinium arsenide
ph.1. 砷化镓
6.
GaAs Film Grown on Conducting Glass and Si by Hot Wall Epitaxy;
导电玻璃和硅上热壁外延生长砷化镓薄膜的研究
7.
gallium arsenide injection laser
砷化镓注入式激光器
8.
gallium arsenide fet
砷化镓场效应晶体管
9.
gallium arsenide avalanche photodiode
砷化镓雪崩光电二极管
10.
GaAs laser terrain profiler
砷化镓激光地形测绘仪
11.
Studies on GaAs Surface Properties and Surface Oxidation Excited by UV Light;
砷化镓表面特性及紫外光激发下表面氧化反应研究
12.
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
13.
Boat-grown gallium arsenide single crystals and As-cut slices
GB/T11094-1989水平法砷化镓单晶及切割片
14.
GaAs PN junction injection laser
砷化镓ＰＮ结注入式激光器
15.
GaAs double-heterostructure photodetector
砷化镓双异质结构光探测器
16.
An Angle Sensor Using a GaAs Hall Device
利用砷化镓霍尔器件制造角度传感器
17.
Doping Behavior of Semi-insulating GaAs by Neutron Transmutation;
半绝缘砷化镓中子嬗变掺杂行为研究
18.
Study on the Large-signal Modeling of GaAs RF Power MESFET;
砷化镓射频功率MESFET大信号模型研究