1.
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
2.
Study on Si-GaAs Crystal Dislocation Cell Structure and Microdefects;
半绝缘砷化镓单晶中位错胞状结构和微缺陷的研究
3.
Study on the Impurity and Microdefects in Semi-Insulating Gallium Arsenide Crystals;
半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷
4.
Doping Behavior of Semi-insulating GaAs by Neutron Transmutation;
半绝缘砷化镓中子嬗变掺杂行为研究
5.
The Effect of Dislocation on Micro-Distribution of Carbon in Undoped Semi-Insulation Gallium Arsenide;
非掺半绝缘砷化镓中位错对碳微区分布的影响
6.
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
7.
Boat-grown gallium arsenide single crystals and As-cut slices
GB/T11094-1989水平法砷化镓单晶及切割片
8.
gallium arsenide ultrared lighting transistor
砷化镓红外发光晶体管
9.
gallium arsenide fet
砷化镓场效应晶体管
10.
PREPARATION OF A HIGH PURITY GALLIUM ARSENIDE MONOCRYSTAL BY DOPING WITH TRACE TIN AND ITS HEAT TREATMENT
反掺锡高纯度砷化镓单晶的制备及热处理
11.
Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
GB/T11093-1989液封直拉法砷化镓单晶及切割片
12.
Gallium arsenide single crystal--Determination of dislocation density
GB/T8760-1988砷化镓单晶位错密度的测量方法
13.
The control on EPD during growing HB-GaAs-Si single crystals
水平掺硅砷化镓单晶生长过程中位错的控制
14.
galinium arsenide
ph.1. 砷化镓
15.
Investigation About Growing the GaAs Single Crystal Containing Low Dislocations by Using Liquid Encapsulation Technique
采用液体封闭技术生长低位错砷化镓单晶的研究
16.
mos insulated gate transistor
绝缘栅金属氧化物半导体晶体管
17.
Fe Doping Activation and Defect in Semi-insulating InP;
半绝缘InP单晶的Fe掺杂激活及缺陷研究
18.
Electrical Characterization Measurement of Semi-insulating SiC Single Crystal;
半绝缘SiC单晶电学参数的测量技术研究