1.
Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。
2.
When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.
使一块金属与n型半导体接触时，电子将从半导体流到金属。
3.
The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal.
在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。
4.
Investigation of TiC Ohmic Contacts to N-type 4H-SiC Semiconductor;
TiC/n型4H-SiC半导体欧姆接触研究
5.
Semiconductors are made in two types the N-type and the P-type.The N-type is ready to give up electrons and the P-type liable to accept them.
半导体制两种类型N型和P型。N型可释放电子，而P型容易接受电子。
6.
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在实际应用，中在一个半导体晶体上总是同时形成一个n型和一个p型，组成一个正p－n结。
7.
Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor
n型金属氧化物半导体场效应晶体管噪声非高斯性研究
8.
n well cmos process
n 阱互补金属氧化物半导体工艺
9.
Activation of room-temperature ferromagnetism in Mn doped ZnO thin films by N codoping
Mn和N共掺ZnO稀磁半导体薄膜的研究
10.
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
在半导体材料中维持电流的最小单元,在P型硅中是空穴,在N型硅中是自由电子。
11.
In electronics, an interface between a P-type and N-type semiconductor material ; such an interface produces a diode effect.
在电子技术中,一种P型和N型半导体材料之间的界面,这种界面可以产生二极管效应。
12.
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
13.
Preparation and Photocatalytic Activity of n-type Oxide Semiconductor Micro-nano Materials by Electrospinning;
n型氧化物半导体微纳米材料的静纺丝法制备技术及其光催化性能研究
14.
Studies on Metal-Semiconductor Contacts of 6H-SiC and Some Interrelated Processes;
n型6H-SiC金半接触及相关工艺研究
15.
Photoluminescence and Nonlinear Optical Study of Diluted Magnetic Semiconductor (GaMn)N
稀磁半导体（GaMn）N发光及非线性光学特性研究
16.
Thickness Measurement of In_xGa_(1-x)N Semiconductor Film Based on Reflection Spectra
基于反射光谱的In_xGa_(1-x)N半导体薄膜厚度测量
17.
Characteristics of dilute magnetic semiconductor(Ga,Mn)N grown by ECR-PEMOCVD
基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性
18.
Approximate Analytical Solution of Vortices with Quantum n=90-110 in Dual Superconductor Model
对偶超导模型n=90—110的近似解析解