1.
Molecular Dynamics Simulation of the 30 Degrees Dislocation in Silicon Crystal;
Si晶体中30度位错运动的分子动力学研究
2.
Type a number that has an angular unit, for example: 30deg.
键入带有角度单位的数字，例如: 30 度。
3.
Oil control ring gap to be located 30 degrees to the left of combustion chamber recess.
控油环间隙位于燃烧室凹口的左30 度。
4.
MOLECULAR DYNAMICS SIMULATION OF THE INTERACTION BETWEEN 30°PARTIAL DISLOCATION AND MONOVACANCY IN Si
Si中30°部分位错和单空位相互作用的分子动力学模拟
5.
Molecular Simulation for Migration Characteristics of Kink-Reconstruction Defect Complex on 30° Partial Dislocation in Silicon
Si中30°部分位错弯结-重构缺陷运动特性的分子模拟
6.
The thermometer reads 30 degrees.
温度计指着30 度。
7.
Modular 30 degree outside-wedge seat section. Attach to other modular seats and tables.
外侧为 30 度的楔形模块式座位模件。与其它模块式座位和桌子相连。
8.
Modular 30 degree inside-wedge seat section. Attach to other modular seats and tables.
内侧为 30 度的楔形模块式座位模件。与其它模块式座位和桌子相连。
9.
Now they are much smaller-30 centimeters long for a data rate of a gigabit per second.
资料传输速度若为每秒10亿位元，一个位元就等于30公分长。
10.
Distribution Parameters of Dislocation Link Length Related with Various Slip Area and the Fraction of Mobile Dislocation Density
位错链长分布参数与可动位错密度分量及滑移面积的关系
11.
As creep goes on, the dynamic recovery (DRV) may occur, and the dislocations are concentrated to form the dislocation cells or walls.
随蠕变进行,高密度的形变位错发生动态回复,可进一步束集形成位错胞和位错墙.
12.
Illusion Panic in the False Judgment,Ill-positioning Adjustment in the False Judgment An Analysis and Projection for International Financial Market of the 3rd Quarter;
错判中错觉恐慌 错判中错位调整——2007年第3季度国际金融市场分析预测
13.
The total dislocation length per unit volume of material; alternately, the number of dislocations that intersect a unit area of a random surface section.
材料单位体积内的位错线的总长度，或者在一个随机切面上的单位面积内切断的位错根数。
14.
The adventurer started out at midnight in a temperature of30 below zero.
这位冒险家在晚上十二点钟，冒着摄氏零下30度的严寒出发了。
15.
Top ring gap must be positioned at 30 degrees to the right of the combustion chamber recess (looking at the piston crown from above).
顶部环间隙必须定位在燃烧室凹口右30度（从上看活塞头）。
16.
Germanium monocrystal--Inspection of dislocation etch pit density
GB/T5252-1985锗单晶位错腐蚀坑密度测量方法
17.
Gallium arsenide single crystal--Determination of dislocation density
GB/T8760-1988砷化镓单晶位错密度的测量方法
18.
The Study on Measuring RMB Behavioral Equilibrium Exchange Rate and Misalignment;
人民币行为均衡汇率及错位程度的测算研究