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1.
Research of Signal Integrity Problem in Deep Submicron VLSI Design;
深亚微米VLSI设计中的信号完整性问题研究
2.
The Algorithm Study on Signal-Integrity Main Problems in Deep Submicron VLSI Power Grids;
深亚微米VLSI电源/地线网络信号完整性主要问题的算法研究
3.
The Problems and Methods on VLSI/ASIC Come into Secondary Micrometer and Deep Secondary Micrometer Field;
VLSI/ASIC进入亚微米深亚微米后出现的问题及解决的办法
4.
Progress in the Developments of DSM IC Technology in the 21~(st) Century
21世纪深亚微米芯片技术的新进展
5.
The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;
深亚微米MOS器件热载流子效应研究
6.
Characteristics Research of Ultra-Deep-Submicron SOI SiGe MOSFETs;
超深亚微米SiGe SOI MOSFETs的特性研究
7.
The High Temperature Application Research of Deep Sub Micron SOI CMOS Circuits;
深亚微米全耗尽SOI CMOS的高温应用分析
8.
Research on NBTI in Ultra Deep Sub Micron PMOSFET Device;
超深亚微米PMOSFET器件NBTI研究
9.
Research on Library Building of VDSM Memory;
深亚微米工艺下的Memory建库技术研究
10.
Research on the IP Design Methodology Based on the DSM Technology;
基于深亚微米工艺的IP设计技术研究
11.
Research on Timing Modeling of VDSM IC Cells;
深亚微米工艺下的单元时序建模研究
12.
Study on the Structure and Reliability of Deep Submicrion SDE MOSFET;
深亚微米SDE MOS器件结构及可靠性研究
13.
A Research on RTS Noise in Ultra Deep Submicron MOS Devices;
超深亚微米MOS器件RTS噪声研究
14.
Very Deep Submicron GHz CAM Full Custom Design
深亚微米GHz级CAM全定制设计
15.
Research on Hot-carrier Effects for Deep-submicron LDD MOSFET
深亚微米LDD MOSFET器件热载流子效应研究
16.
Study of Parameters Limiting ESD Performance in Deep Submicron process
深亚微米工艺ESD电路设计参数研究
17.
2-D Current Model of Fully Depleted SOI BJMOSFET
深亚微米全耗尽SOI BJMOSFET的二维电流模型
18.
Study on SEE characteristic and hardening techniques of CMOS SRAM with sub-micro feature sizes
深亚微米CMOS SRAM SEE特性及加固技术研究