1.
Effects of deposition parameters on deposition rate of B-C-N film prepared by magnetron sputtering
磁控溅射沉积参数对硼碳氮薄膜沉积速率的影响
2.
Effect of Technological parameters on deposition rate of ZAO films prepared by DC magnetron reactive sputtering
工艺参数对直流反应磁控溅射ZnO:Al薄膜沉积速率的影响
3.
MECHANISM AND KINETICS OF ELECTROPHORETIC DEPOSITION (EPD) OF YTTRIA-STABILIZED ZIRCONIA (YSZ) FILM
电泳沉积法制备固体电解质薄膜的沉积速率和沉积机理
4.
The deposition rate of Al film decreases with the increase of the substrate temperature.
随着基片温度的增加,薄膜的沉积速率反而降低。
5.
Study of Deposition Rat and IR Analysis of a-Si:H Film Prepared by MWECR CVD;
MWECR CVD制备：a-Si：H薄膜的沉积速率研究和红外分析
6.
Influences of deposition rate and oxygen partial pressure on residual stress of HfO_2 films
沉积速率和氧分压对HfO_2薄膜残余应力的影响
7.
Influences of Oxygen Partial Pressure and Deposition Rate on Residual Stress of YSZ Thin Films
氧分压和沉积速率对YSZ薄膜残余应力的影响
8.
Effect of Oxygen Partial Pressure and Deposition Rate on the Properties of ITO Film
氧分压与沉积速率对ITO薄膜性能的影响
9.
Influences of deposition temperature and rate on mechanical stress of electron beam deposited ZnSe thin films
沉积温度和速率对电子束沉积ZnSe薄膜应力特性的影响
10.
The deposition rate increases with the increasing of bias voltage pressure.
类金钢石薄膜的沉积速率随极板负偏压、体工作压力的增加而增大。
11.
An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films
高速沉积微晶硅薄膜光发射谱的研究
12.
High rate growth and electronic property of μc-Si∶H
微晶硅薄膜高速沉积及电学性质的研究
13.
Optimized Growth Conditions and High Deposition Rate of μc-Si∶H Films
氢化微晶硅薄膜的两因素优化及高速沉积
14.
Characterization of Solution-deposited LiMn_2O_4 Thin Films with Different Thickness Heat-treated by Rapid Thermal Annealing
采用溶液沉积及快速退火制备LiMn_2O_4薄膜的研究
15.
The Deposition Mechanism of MgZnO Films by PLD with High Pulse Energy
高脉冲功率能量PLD法制备MgZnO薄膜中的沉积机理
16.
Influence of Deposition Power of the Diamond-like Carbon Films Prepared by Medium Frequency Reactive Deposition
中频磁控溅射制备a-C∶H薄膜中沉积功率的影响
17.
INFLUENCE OF VACUUM DEPOSITION RATE ON ELECTRICAL CHARACTARISTICS OF Ni-Cr-Si FILM RESISTORS
真空淀积速率对镍铬硅薄膜电阻电性能的影响
18.
Investigation on Preparing an Even Large Area and Excellent Optoelectric Properties Hydrogenated Amorphous Silicon Film with Higher Rate;
高速沉积大面积均匀氢化非晶硅薄膜及其优异的光电特性的研究