1.
Thermal Annealing Effects on the Optical Properties of Amorphous Silicon Carbide Films;
非晶碳化硅薄膜光学特性的热退火效应
2.
Structural Evolution and Properties of Amorphous Silicon-Carbon Thin Films Deposited by Micro-wave Electron Cyclotron Resonance Plasma;
微波电子回旋共振法沉积的非晶碳化硅薄膜结构和性能研究
3.
Crystallization of Amorphous SiCN Ceramic Annealed in Vacuum
真空气氛下非晶硅碳氮(SiCN)陶瓷的高温晶化行为
4.
Preparation of SiC Whiskers by Low-temperature Decomposition of Silicon Nitride
氮化硅低温转化合成碳化硅晶须研究
5.
A trademark used for an abrasive of silicon carbide crystals.
金刚砂一种碳化硅晶体磨料的商标名
6.
The Technology and Research on Properties of Sic Field-Effect Transistor;
碳化硅场效应晶体管技术与特性研究
7.
Study of Si-Coated Carbon Nanotube and Silicon Carbide Whisker and Properties of Coating;
碳纳米管和碳化硅晶须表面镀硅及镀层性能的研究
8.
In-situ Synthesis of AlN/SiC Multiphase Ceramics from Kyanite
蓝晶石原位合成氮化铝结合碳化硅复相材料
9.
Growth of SiC Crystal by High Temperature Chemical Vaporous Deposition(HTCVD)
高温化学气相沉积法生长碳化硅晶体(HTCVD)
10.
The outer mechanical seal shall be constructed with a solid block silicon carbide rotating seal face and a solid block silicon carbide stationary seal face.
外置的机械密封应该采用一块整体结晶碳化硅旋转密封面和一块整体结晶碳化硅固定密封面。
11.
Study of the Growth of SiC Crystals with Different Morphologies in Matal-silicide Fluxes;
金属硅化物熔体中不同形貌碳化硅晶体的生长研究
12.
Investigation on the Behavior of Oxygen and Carbon Action and the Passivation and Antireflection of Si_3N_4 of Mc-Si Used for Solar Cells;
多晶硅太阳电池中氧碳行为和氮化硅的钝化及减反射的研究
13.
Some Fundamental Topics on β-SiC Crystal Growth
β碳化硅晶体生长技术的若干基本问题
14.
Research of Re-crystallization Silicon Carbide Heating Element by Extrusion Molding;
挤出成型制备重结晶碳化硅热端材料的研究
15.
Synthesis and Characterization of Silicon Carbide Whisker Arrays Prepared by Thermal Evaporation Method;
热蒸发方法碳化硅纳米晶须阵列的合成与表征
16.
Study of Damping Capacities in Silicon Carbon Whisker Reinforced Magnesium Matrix Composite;
碳化硅晶须增强镁基复合材料阻尼性能研究
17.
Synthesis and Characterization of Silicon Carbide Nano-whisker by Thermal Evaporation Method;
碳化硅纳米晶须的热蒸发法合成与表征
18.
The Effects of Pocessing Parameters on the SiC Whisker Formation in the SiO_2-C-Na_3AlF_6 System
工艺因素对SiO_2-C-Na_3AlF_6系合成碳化硅晶须的影响