1.
Study on Hot-carrier Effect in Ultra-deep Submicronmeter MOSFET;
超深亚微米MOSFET器件中热载流子效应的研究
2.
Research on Hot-carrier Effects for Deep-submicron LDD MOSFET
深亚微米LDD MOSFET器件热载流子效应研究
3.
The Research of Deep Submicron Fully Depleted SOI MOSFET Parameter Extraction Method;
深亚微米全耗尽SOI MOSFET参数提取方法的研究
4.
Gate Dielectric Breakdown of Very-Deep Sub-micron n-channel Si-MOSFET;
超深亚微米n沟道Si-MOSFET中栅介质的击穿
5.
Study on the Modeling and Hot Carrier Induced Reliability of Ultra-deep Submicrometer LDD MOSFETs;
超深亚微米LDD MOSFET器件模型及热载流子可靠性研究
6.
Progress in the Developments of DSM IC Technology in the 21~(st) Century
21世纪深亚微米芯片技术的新进展
7.
The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;
深亚微米MOS器件热载流子效应研究
8.
Characteristics Research of Ultra-Deep-Submicron SOI SiGe MOSFETs;
超深亚微米SiGe SOI MOSFETs的特性研究
9.
The High Temperature Application Research of Deep Sub Micron SOI CMOS Circuits;
深亚微米全耗尽SOI CMOS的高温应用分析
10.
Research on NBTI in Ultra Deep Sub Micron PMOSFET Device;
超深亚微米PMOSFET器件NBTI研究
11.
Research on Library Building of VDSM Memory;
深亚微米工艺下的Memory建库技术研究
12.
Research on the IP Design Methodology Based on the DSM Technology;
基于深亚微米工艺的IP设计技术研究
13.
Research on Timing Modeling of VDSM IC Cells;
深亚微米工艺下的单元时序建模研究
14.
Study on the Structure and Reliability of Deep Submicrion SDE MOSFET;
深亚微米SDE MOS器件结构及可靠性研究
15.
A Research on RTS Noise in Ultra Deep Submicron MOS Devices;
超深亚微米MOS器件RTS噪声研究
16.
Very Deep Submicron GHz CAM Full Custom Design
深亚微米GHz级CAM全定制设计
17.
Study of Parameters Limiting ESD Performance in Deep Submicron process
深亚微米工艺ESD电路设计参数研究
18.
2-D Current Model of Fully Depleted SOI BJMOSFET
深亚微米全耗尽SOI BJMOSFET的二维电流模型