1.
Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible.
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。
2.
Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition
基于低温InGaP组分渐变缓冲层的InP/GaAs异质外延
3.
XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;
GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
4.
Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers
基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延
5.
GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices
GaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
6.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
7.
The InSb Epitaxial Growth on GaAs Substrate by Molecular Beam Epitaxy and Its Structure and Properties;
GaAs基InSb薄膜的分子束外延生长及其结构与性能
8.
Effect of Reconstructures on Molecular Beam Epitaxial Growth of GaAs;
表面再构对GaAs分子束外延薄膜生长的影响
9.
Research on Selective Liquid Phase Epitaxial Growth of GaAs Microtips;
GaAs微探尖的选择液相外延制备技术研究
10.
Geometric phase analysis of strain in AlSb/GaAs hetero-epitaxial film by HRTEM
AlSb/GaAs异质外延薄膜应变的HRTEM几何相位分析
11.
Preparation and Measurements of InP/GaAs(100) Heteroepitaxy
GaAs衬底上InP的直接外延生长及性能表征
12.
Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;
GaAs/Si和含B光电子材料异质外延生长的理论和实验研究
13.
Characterization of 4H-SiC Homoepitaxial layers
4H-SiC同质外延层的质量表征
14.
Method for Measuring Thickness of B-Doped p~+-Si Epitaxial Layer
掺硼p~+-Si外延层厚度的测试方法
15.
The Buffer Layer of Al-doped 4H-SiC
Al掺杂4H-SiC同质外延的缓冲层
16.
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T8758-1988砷化镓外延层厚度红外干涉测量方法
17.
Technique Research Status and Development Trends of GaAs Tandem Solar Cell;
GaAs叠层太阳能电池技术的研究现状及发展趋势
18.
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长