1.
Characterization and Growth of 1.2μm Highly Strained InGaAs/GaAs Quantum Well;
1.2μm InGaAs/GaAs高应变量子阱材料的生长及特性研究
2.
InP Based InGaAlAs/InGaAsSb Strained Quantum Well Laser Materials and Design;
InP基InGaAlAs/InGaAsSb应变量子阱激光器材料与设计研究
3.
Study on Irradiation Effects of GaAs/AlGaAs Multiple Quantum Wells;
GaAs/AlGaAs多量子阱材料的辐照效应研究
4.
Study on Irradiation Effects of Quantum Well Material Caused by Free Electron Laser;
自由电子激光对量子阱材料的辐照效应研究
5.
GaSb Based Quantum Well Laser Materials
GaSb基锑化物量子阱激光器材料的研究
6.
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
GaN基激光器多量子阱垒材料的研究
7.
Quantum well infrared photodetector material with photoluminescence measurement
多量子阱红外探测材料的光致荧光谱
8.
A Study of Multiple Quantum Wells for All-Optical Switching on Spin Electronics;
用于电子自旋光开关的多量子阱材料研究
9.
Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;
InAlGaN材料系多量子阱结构电子学特性的研究
10.
Optimum Structural Design for QW Laser Material and Grown by MOCVD;
MOCVD生长量子阱激光器材料及结构的优化设计
11.
Structure Design and Characteristic of GaSb Substrate Multiple Quantum-well Laser Materials;
GaSb基量子阱激光器材料的结构设计与特性表征
12.
Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement
用PL谱评测多量子阱红外探测器外延材料
13.
Study of Resonant Tunneling Effects in Zn_(1-x)Cd_xSe/ZnS Quantum Well
Zn_(1-x)Cd_xSe/ZnS量子阱材料的共振遂穿特性研究
14.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
15.
Study on InGaAs/GaAs Strained Quantum well Lasers;
InGaAs/GaAs应变量子阱半导体激光器的研究
16.
940nm Strained Quantum Well Lasers and Reliability Study;
940nm应变量子阱激光器及其可靠性研究
17.
Pressure Effect on Screened Exciton in Strained GaN/AlGaN Quantum Well;
应变GaN/AlGaN量子阱中受屏蔽激子的压力效应
18.
Laser Strained Self-Organized Quantum Dot Materials and Quantum Dot
应变自组装量子点材料与量子点激光器