1.
Accurate calibration of the spectral responsivity of silicon trap detectors between 350nm and 1064nm
硅陷阱探测器在350—1064nm波段的绝对光谱响应度定标
2.
The results prove the stability of trap detector and the reasonable improvement of light path.
这些结果证实陷阱探测器稳定性优良,光路改造合理。
3.
A Study of Photocurrents of Terahertz Quantum-Well Photodetectors;
太赫兹量子阱探测器光电流谱的研究
4.
Influence of Corona Intensity on the Trap Characteristics of HTV Silicone Rubber
电晕强度对HTV硅橡胶陷阱特性的影响
5.
Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement
用PL谱评测多量子阱红外探测器外延材料
6.
Research on Silicon and Silicon Photoelectric Detector Irradiated by Femtosecond Laser;
飞秒激光辐照硅及硅光电探测器研究
7.
Development Status of Quantum Well Infrared Photodetectors in the Euramerican Countries
国外量子阱红外焦平面探测器的发展概况
8.
Study on Optical Coupling Performance of Very Long-Wavelength Quantum Well Infrared Photodectors;
甚长波量子阱红外探测器光耦合性能研究
9.
Study and Improvement of Novel GaAs/AlGaAs Quantum Well Middle and Long Wavelength Infrared Photodetectors;
新型GaAs/AlGaAs量子阱中远红外探测器的研究与改进
10.
High-Power Property of Resonant-Cavity-Enhanced Photodetectors Grown on GaAs
量子阱共振腔增强型光电探测器的高功率特性
11.
Monte Carlo Simulation of Electron Transport in Terahertz Semiconductor Quantum-well Photodetectors
太赫兹量子阱光探测器电子输运特性的MC模拟
12.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
13.
Multi-quantum-well InGaNAs/GaAs one mirror inclined three-mirror cavity photodetector operating at 1.3 μm
1.3μm InGaNAs/GaAs多量子阱“一镜斜置三镜腔”光探测器
14.
Stimulated emission in porous silicon quantum dots:the role of trap states
多孔硅量子点的受激辐射:陷阱态的作用
15.
A Study and Parameter Measurement and Calculation on VMJ Si X-RAY Sounder;
VMJ硅X-RAY探测器件的研究与参数测算
16.
Light-emitting Thin Films and Devices Based on Silicon-rich Nitride and Nano-silicon Multi-quantum-well Structures
富硅氮化硅和纳米硅多层量子阱硅基发光薄膜与器件
17.
"It's easy to fall into a trap, But hard to get out again"
堕入陷阱易,脱离陷阱难
18.
A Study on Export Rebate Rate Trap and Implicit Refund ;
对出口退税率陷阱、隐性退税的探讨