1.
Investigation of n-type GaN deposited on sapphire substrate with different small misorientations
淀积在不同小倾角蓝宝石衬底的n型GaN的研究
2.
Models of Compensation Ratio and Mobility of Wurtzite n-GaN;
纤锌矿n-GaN的补偿度及迁移率模型
3.
Electronic and magnetic properties of p,n type dopant and Mn co-doped GaN
p,n型掺杂剂与Mn共掺杂GaN的电磁性质
4.
Improving the quantum well properties with n-type InGaN/GaN superlattices layer
引入n型InGaN/GaN超晶格层提高量子阱特性研究
5.
A new p-n structure ultraviolet photodetector with p~--GaN active region
以弱p型为有源区的新型p-n结构GaN紫外探测器
6.
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
7.
Fabrication of n-ZnO/i-ZnO/p-GaN Heterostructure LEDs by PLD;
PLD方法制备n-ZnO/i-ZnO/p-GaN异质结LED
8.
The Energy of an Exciton in a Wurtzite GaN/Al_xGa_(1-x)N Quantum Well
纤锌矿GaN/Al_xGa_(1-x)N量子阱中激子能量
9.
Study on Intersubband Transition in Al_xGa_(1-x)N/GaN Double Quantum Wells;
Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的研究
10.
Effects of Electron Irradiation on n-GaN UV Detector;
n-GaN肖特基紫外光探测器的电子辐照效应
11.
Energy of the Bound Polaron in Wurtzite GaN/Al_xGa_(1-x)N Quantum Well;
纤锌矿GaN/Al_xGa_(1-x)N量子阱中束缚极化子能量
12.
Electron-Optical-Phonon Scattering Rate in a Strained GaN/Ga_xIn_(1-x)N Heterojunction;
GaN/Ga_xIn_(1-x)N应变异质结中电子—光学声子散射率
13.
Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;
n-GaN肖特基势垒二极管的高温电子辐照效应
14.
Binding Energy of a Hydrogenic-like Impurity in In_xGa_(1-x)N/GaN Quantum Dots;
In_xGa_(1-x)N/GaN量子点中类氢杂质态结合能
15.
Electron-optical-phonon Scattering Rate in a Strained GaN/GaxIn1-xN Heterojunction
应变对GaN/Ga_xIn_(1-x)N异质结中界面声子的影响
16.
Ultraviolet Luminescence from Mg-doped Al_xGa_(1-x)N/GaN Superlattice
Mg掺杂的Al_xGa_(1-x)N/GaN超晶格紫外峰的性质
17.
Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures
Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质
18.
First-Principles Investigation on Pd_n、Pd_(n-1)S Clusters and the Phenomena about Blue-shift in the GaN by Al-doping;
Pd_n、Pd_(n-1)S团簇与Al掺杂GaN致使蓝移现象的第一性原理研究