1.
Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition
PLD工艺制备高质量ZnO/Si异质外延薄膜
2.
Investigations of Heteroepitaxy and New Semiconductor Materials for Optoelectronic Integration
光电子集成中的异质外延与新材料研究
3.
Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition
基于低温InGaP组分渐变缓冲层的InP/GaAs异质外延
4.
Geometric phase analysis of strain in AlSb/GaAs hetero-epitaxial film by HRTEM
AlSb/GaAs异质外延薄膜应变的HRTEM几何相位分析
5.
Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Composite Substrates
AlN/Si(111)复合衬底上4H-SiC薄膜的异质外延
6.
Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology
异质外延GaN薄膜中缺陷对表面形貌的影响
7.
Study of Growth Technology and Structural Properties of SiC Films on Sapphire Compound Substrate;
碳化硅宽带隙半导体薄膜的异质外延生长技术及其结构性质分析
8.
Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition
同质与异质外延掺杂CVD金刚石薄膜的结构与性能
9.
Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)
10.
Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;
载能沉积过程与异质外延生长行为的分子动力学模拟研究
11.
Study on Heteroepitaxial Growth of Au/Cu,Ag/Cu and Cu/Au System by Molecular Dynamics Dynamics Simulation;
Au/Cu、Ag/Cu及Cu/Au体系异质外延生长的分子动力学研究
12.
Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;
GaAs/Si和含B光电子材料异质外延生长的理论和实验研究
13.
XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;
GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
14.
GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices
GaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
15.
The Calculation of Strain Field in Semiconductor Heteroepitaxy Material and Quantum Dot Relax Degree
半导体异质外延材料的应变场及量子点弛豫度的计算
16.
Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers
基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延
17.
It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.
结果表明外延层具有平坦的异质结界面和良好的晶体特性。
18.
Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure
钙钛矿锡酸盐外延薄膜及相关异质结制备与物性研究