1.
optically optimal tellurium-cadmium-mercury infrared detector
光优型碲镉汞红外探测器
2.
The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;
碲镉汞环孔P-N结理论分析与测试
3.
LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY
长波红外2048元线列碲镉汞焦平面器件
4.
SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS
碲镉汞红外双色探测器响应光谱研究
5.
Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy
碲镉汞晶体结构性质的电子显微术研究
6.
The Study of the Micro Dewar for Long Linear HgCdTe IRFPA
长线列碲镉汞红外焦平面微型杜瓦的研究
7.
Hydrogen Passivate HgCdTe: First-principle Study
红外碲镉汞材料氢钝化行为的第一性原理研究
8.
Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length
飞秒红外激光辐照PV型碲镉汞探测器实验研究
9.
Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication
碲镉汞探测器制备湿法和干法工艺的研究进展
10.
Trends in Two-color Infrared Focal Plane Detectors of MCT
双色碲镉汞红外焦平面探测器发展现状
11.
Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE
碲镉汞液相外延薄膜典型缺陷及其起源分析
12.
The measurement results for Hg Cd Te photodiodes are presented.
文中列出了碲镉汞光电二极管结电容的测量结果.
13.
The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.
用分析电子显微镜观察了碲镉汞晶体的显微结构。
14.
Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;
单元光伏型碲镉汞探测器及可见光CCD的激光损伤机理研究
15.
Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)
脉冲激光沉积（PLD）碲镉汞（HgCdTe）薄膜材料结构特性的研究
16.
Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation
γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
17.
NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER
皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象
18.
Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector
砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性