1.
The Si unit for length is the meter, m.
长度的SI单位是米（m）。
2.
This system is called the International System of Units, abbreviated SI.
这种单位制叫国际单位制，缩写为SI。
3.
The unit of work and energy in the SI system is the joule(J).
在国际单位制（SI）中，功和能的单位是焦耳（J）。
4.
The SI system therefore takes the ampere as one of its fundamental units.
因此，si制取安培作为它的基本单位之一。
5.
MOLECULAR DYNAMICS SIMULATION OF THE INTERACTION BETWEEN 30°PARTIAL DISLOCATION AND MONOVACANCY IN Si
Si中30°部分位错和单空位相互作用的分子动力学模拟
6.
Even if one is committed to the SI system, there is no objection to such units as grams, centimeters, millimeters, etc.
即使责成人们使用SI体系，而象克、厘米、毫米等这样的单位也没什么。
7.
Research on 3 inch Si-doped GaAs crystal by LEC technology
LEC技术生长3inch掺Si GaAs单晶的研究
8.
In this paper,molecular dynamics simulation is carried on the nanometer grinding of monocrystalline silicon.
对单晶Si的压痕过程进行了分子动力学模拟。
9.
Study on the Impurity and Microdefects in Semi-Insulating Gallium Arsenide Crystals;
半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷
10.
Study on SiGe/Si Epitaxy and SiGe HBT Microwave Monolithic Integrated Circuit;
SiGe/Si外延与SiGe HBT微波单片放大电路研究
11.
Research of 0.5THz Monopulse Antenna feed network Based on Si-MEMS Technology
基于Si基MEMS技术的0.5THz单脉冲天馈系统的研究
12.
Process Improvement of Surface Texturization of Monocrystalline Silicon for Solar Cells
太阳能电池单晶Si表面织构化的工艺改进
13.
Research on Simulation of Single-Phase APFC Based on Ansoft Simplorer7.0
基于Ansoft SI MPLORER7.0的单相有源功率因数校正仿真研究
14.
Surface morphology of Si single crystal induced by HCPEB bombardment
强流脉冲电子束轰击对单晶Si表面形貌的影响
15.
Investigation of the Resistivity Uniformity Influenced by Impurity Segregation in FZ-Si
杂质分凝对FZ-Si单晶电阻率均匀性影响的研究
16.
Research on the Kinetics of in-situ Formation of Sialon in the Al_2O_3-Si-Al System;
Al_2O_3-Si-Al系统中原位合成Sialon的动力学研究
17.
Molecular Dynamics Simulation of the 30 Degrees Dislocation in Silicon Crystal;
Si晶体中30度位错运动的分子动力学研究
18.
Research of Mg_2Si/Al-20%Si In-Situ Composites and Complex Modifier;
原位Mg_2Si／Al-20%Si复合材料及复合变质剂的研究