1.
Research on the Polishing of Silicon Wafer by Fixed Abrasive Pad
固结磨料抛光垫抛光硅片的探索研究
2.
Basic Research on Hybrid Technology of Ultrasonic Elliptic Vibration Assisted Chemical-Mechanical Polishing a Silicon Wafer;
超声椭圆振动—化学机械复合抛光硅片技术的基础研究
3.
Chemical mechanical polishing for silicon wafer by composite abrasive slurry
利用复合磨粒抛光液的硅片化学机械抛光
4.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
5.
Test methods for surface flatness of silicon polished slices
GB/T6621-1995硅抛光片表面平整度测试方法
6.
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
7.
Study on Electrochemistry and Polishing Rate of Chemical Mechanical Polishing of Semiconductor Silicon Wafer;
半导体硅片化学机械抛光电化学与抛光速率研究
8.
Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer
硅片化学机械抛光加工区域中抛光液动压和温度研究
9.
Test method for detection of oxidation induced defects in polished silicon wafers
GB/T4058-1995硅抛光片氧化诱生缺陷的检验方法
10.
Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T6624-1995硅抛光片表面质量目测检验方法
11.
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflectio
GB/T17169-1997硅抛光片和外延片表面质量光反射测试方法
12.
Preparation of Silica Abrasives from Water Glass and Application in Silicon Wafer Polishing
水玻璃为原料制备纳米氧化硅磨料及应用于硅片抛光(英文)
13.
Study on Chemical Mechanical Polishing of Semiconductor Silicon Wafer with Nano-SiO_2 Slurries and Its Application;
纳米SiO_2浆料中半导体硅片的化学机械抛光及其应用研究
14.
Preparation Nano-CeO_2 Particles and Its Polishing Performance for Si(100) and Si(111)
纳米CeO_2颗粒的制备及其对硅晶片(100)和(111)的抛光性能
15.
Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior
基于磨损行为的单晶硅片化学机械抛光材料的去除特性
16.
Analysis on temperature field when polishing with ice fixed abrasives based on FEM
基于有限元法的硅片冰冻固结磨料抛光温度场分析
17.
Effect of Polishing Processes on the Roughness of GaAs Wafers
抛光工艺对GaAs抛光片粗糙度的影响
18.
Study on CMP Slurry Prescription of SiO_2 ILD;
二氧化硅介质层CMP抛光液配方研究