1.
A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;
AlGaN/GaN高电子迁移率晶体管的模型研究
2.
high electron mobility transistor
高电子迁移率晶体管
3.
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
4.
Monolithic Integration of GaAs Enhancement/depletion-mode PHEMTs
单片集成GaAs增强/耗尽型赝配高电子迁移率晶体管
5.
Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;
光学声子对AlN/GaN量子阱中电子迁移率的影响
6.
Development of GaN-Based Photonic Crystal LED of High Extraction Efficiency
高出光率GaN基光子晶体LED的研究进展
7.
Nonlinear Electrical Transport Properties and Mobility in Colossal Magnetoresistance (CMR) Field-effect Transiators (FETs);
LCMO巨磁阻场效应晶体管的非线性电子输运特性及迁移率的研究
8.
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
9.
The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.
10.
The magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.
自由电子在电场的作用下，会由于晶体中的杂质而发生散射，迁移率就是指这种散射发生的频率。
11.
The electron is able to travel through the crystal as easily as through a metal.
这个电子像穿过金属一样很容易在晶体中迁移。
12.
Models of Compensation Ratio and Mobility of Wurtzite n-GaN;
纤锌矿n-GaN的补偿度及迁移率模型
13.
Electron Mobility in Heterojunctions and Its Hydrostatic Pressure Effect;
半导体异质结中的电子迁移率及其压力效应
14.
Key Technology Research of GaN Based Metal-ferroelectric-semiconductor Field Effect Transistor;
GaN基金属—铁电体—半导体场效应晶体管关键技术研究
15.
A Test Device of the Drift Mobility for Non-Crystal Photoconductive Materials
非晶光电导材料漂移迁移率的测试装置
16.
Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;
n-GaN肖特基势垒二极管的高温电子辐照效应
17.
power static-induction transistor
功率静电感应晶体管
18.
carrier drift transistor
载流子漂移型晶体管