1.
Band structure of strained Si_(1-x)Ge_x
应变Si_(1-x)Ge_x能带结构研究
2.
Band Structure Models of Strained Si/(001)Si_(1-x)Ge_x
应变Si/(001)Si_(1-x)Ge_x能带结构模型
3.
Anisotropy of hole effective mass of strained Si/(001)Si_(1-x)Ge_x
应变Si/(001)Si_(1-x)Ge_x空穴有效质量各向异性
4.
Band Structure of Strained Si/(001)Si_(1-X)Ge_X by First Principles Investigation
第一性原理研究应变Si/(001)Si_(1-X)Ge_X能带结构
5.
The Calculation of the Parameters of SiGe Marerial;
Si_（1-x）Ge_x材料参数计算
6.
Research on Growth Mechanism and Kinetics for Si_(1-x)Ge_x/Si Strained Materials
Si_(1-x)Ge_x/Si应变材料生长机理与生长动力学研究
7.
Calculation of Raman shifts of Si_((1-x))Ge_x and amorphous silicon using Keating model
利用Keating模型计算Si_((1-x))Ge_x及非晶硅的拉曼频移
8.
Magnetism and Crystalline Electric Field Calculation of Kondo Lattice System CePt_2(Si_(1-x)Ge_x)_2;
近藤晶格化合物CePt_2(Si_(1-x)Ge_x)_2的磁性和晶体场计算
9.
Study on the Simulation of Si_(1-x) Ge_x MOSFETs;
Si_（1-x）Ge_xMOSFETs模拟技术研究
10.
NEGATIVE THERMAL EXPANSION PHENOMENA OF Mn_3(Cu_(1-x)Ge_x)N
Mn_3(Cu_(1-x)Ge_x)N的负热膨胀现象
11.
Electronic Structure, Preparation and Thermoelectric Properties of Mg_2Si_(1-x)Ge_x;
Mg_2Si_（1-x）Ge_x的电子结构、材料制备及热电性能
12.
LPCVD Fabrication of a-Si_(1-x)C_x:H Thin Films and Its Structural Characterizations;
a-Si_（1-x）C_x：H薄膜的热壁LPCVD制备与结构特性研究
13.
Microstructure and Properties of a-Si_(1-x)C_x:H Thin Films Prepared by PECVDs;
等离子体CVD法制备a-Si_（1-x）C_x：H薄膜及其微结构和性能研究
14.
Effects of Si_(1-x)Ge_x:C buffers' Growth Parameters on Ge films by Chemical Vapor Deposition
Si_(1-x)Ge_x:C缓冲层的生长温度对Ge薄膜外延生长的影响
15.
Electron-Optical-Phonon Scattering Rate in a Strained GaN/Ga_xIn_(1-x)N Heterojunction;
GaN/Ga_xIn_（1-x）N应变异质结中电子—光学声子散射率
16.
Electron-optical-phonon Scattering Rate in a Strained GaN/GaxIn1-xN Heterojunction
应变对GaN/Ga_xIn_(1-x)N异质结中界面声子的影响
17.
First-principles Study of Si_(3-x)C_xN_4 Hardness Materials;
超硬材料Si_（3-x）C_xN_4的第一性原理研究
18.
Dissemination Form of Cardinal Limit lim(1+1/x)~x=e(x→∞) and Its Application;
重要极限lim(1+1/x)~x=e(x→∞)的推广形式及应用