1.
At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom.
当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
2.
gate oxide integrity
栅极氧化层的完整性
3.
thick-layer apt to oxidation type characterized by large thickness of coal seam and low metamorphic degree, and transition type.
以煤层厚度大和低变质程度为特征的厚层氧化类型; 过渡类型.
4.
Influence of Oxide Skin Thickness on Photoemissivity of Polarizing Angle from Surface of Continuous Casting Billets
氧化层厚度对铸坯表面偏振角发射率的影响
5.
Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
6.
double poly process
双层多晶硅栅金属氧化物半导体工艺
7.
avalanche injection stacked gate mos
雪崩注入多层栅金属氧化物半导体
8.
Study of the Reliability of the Gate Oxide Related to EEPROM
EEPROM中栅氧化层的可靠性研究
9.
The Effect of Process Parameters on the Thickness, Bond Strength and Bioactivity of the Titanium Micro-arc Oxidation Film;
工艺参数对钛材微弧氧化膜层厚度、结合强度及生物活性的影响
10.
The effects of coatings with three different SiO_2 thickness on shear bonding strength of zirconia ceramics to the opaque dentin porcelain
三种厚度硅涂层对氧化锆陶瓷与牙本质瓷结合强度的影响
11.
Metallic and oxide coatings--Measurement of coating thickness--Microscopical method
GB/T6462-1986金属和氧化物覆盖层横断面厚度显微镜测量方法
12.
Test methods for thickness of metal and oxide coating by microscopical examination of cross-section
GB/T4677.6-1984金属和氧化覆盖层厚度测试方法截面金相法
13.
Effects of thickness of new landfill cover material on the methane oxidation
垃圾填埋场新型覆盖层材料厚度对甲烷氧化行为的影响
14.
The Influence of Neodymium on Thickness and Surface Quality of Micro-arc Oxidation Ceramic Coating
Nd对镁合金微弧氧化陶瓷层厚度及表观质量的影响
15.
Applications of the Wavelet Transform to Characterize the Oxide Layer,Interlayer and Thickness Fluctuation in Multilayer Structures
小波变换表征多层膜氧化层、界面层和膜厚漂移
16.
Venus has a thick atmosphere of carbon dioxide, with traces of poisonous gases such as sulfur dioxide.
金星有一层厚厚的二氧化碳大气和一些有毒气体，如二氧化硫。
17.
Study on Thermal Stability and Tunneling Current of Ultrathin Gate Oxidation;
超薄栅氧化层的热稳定性和隧道电流研究
18.
Study on Plasma Process Induced Damage in Gate Oxide of MOSFET;
等离子体工艺引起的MOSFET栅氧化层损伤研究