1.
Study of the Reliability of the Gate Oxide Related to EEPROM
EEPROM中栅氧化层的可靠性研究
2.
Study on Thermal Stability and Tunneling Current of Ultrathin Gate Oxidation;
超薄栅氧化层的热稳定性和隧道电流研究
3.
Study on Plasma Process Induced Damage in Gate Oxide of MOSFET;
等离子体工艺引起的MOSFET栅氧化层损伤研究
4.
Process Monitor of Plasma Charging Damage in Ultra-Thin Gate Oxide
超薄栅氧化层等离子体损伤的工艺监测
5.
Study on the Time Dependent Dielectric Breakdown and Reliability Simulation of Ultra-thin Gate Oxides;
超薄栅氧化层经时击穿效应与可靠性仿真技术研究
6.
At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom.
当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
7.
gate oxide integrity
栅极氧化层的完整性
8.
Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
9.
double poly process
双层多晶硅栅金属氧化物半导体工艺
10.
avalanche injection stacked gate mos
雪崩注入多层栅金属氧化物半导体
11.
Vacuum-ultraviolet Blazed Silicon Gratings Anisotropically Wet-etched by a Native-oxide Mask
利用天然氧化层掩模的真空紫外硅闪耀光栅的湿法刻蚀制作
12.
floating gate mos
浮栅金属氧化物半导体
13.
This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type.
这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。
14.
floating gate silicon process
浮栅硅金属氧化物半导体工艺
15.
stacked gate injection mos
叠栅注入金属氧化物半导体
16.
FGMOS(Floating -Gate Metal-Oxide-Semiconductor)
浮动栅金属氧化物半导体
17.
gate injection mos
栅注入式金属氧化物半导体
18.
v groove mos device
v 槽型栅金属氧化物半导体掐