1.
A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;
AlGaN/GaN高电子迁移率晶体管的模型研究
2.
high electron mobility transistor
高电子迁移率晶体管
3.
The Characteristic Research of AlGaN/GaN Heterostructure Field Effect Transistors
AlGaN/GaN异质结场效应晶体管特性研究
4.
The Research of TCAD for AlGaN/GaN HFET
AlGaN/GaN场效应晶体管的TCAD研究
5.
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
6.
Monolithic Integration of GaAs Enhancement/depletion-mode PHEMTs
单片集成GaAs增强/耗尽型赝配高电子迁移率晶体管
7.
Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;
光学声子对AlN/GaN量子阱中电子迁移率的影响
8.
Development of GaN-Based Photonic Crystal LED of High Extraction Efficiency
高出光率GaN基光子晶体LED的研究进展
9.
Nonlinear Electrical Transport Properties and Mobility in Colossal Magnetoresistance (CMR) Field-effect Transiators (FETs);
LCMO巨磁阻场效应晶体管的非线性电子输运特性及迁移率的研究
10.
Reduce Ohmic Contact Resistance to p-GaN Using InGaN/AlGaN Superlattice
用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻
11.
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
12.
GaN/AlGaN Dual-Band Infrared Detection and Photon Frequency Upconversion
GaN/AlGaN双带红外探测及光子频率上转换研究
13.
Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band
X波段大栅宽高输出功率AlGaN/GaN HEMT的研究
14.
The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.
15.
Influence of Surface States on Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure
表面态对AlGaN/GaN异质结构中二维电子气的影响
16.
Band Tailoring in AlGaN/GaN Heterostructure with CF_4 Plasma Treatment
用CF_4等离子体处理来剪裁AlGaN/GaN异质结能带
17.
The magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.
自由电子在电场的作用下，会由于晶体中的杂质而发生散射，迁移率就是指这种散射发生的频率。
18.
The electron is able to travel through the crystal as easily as through a metal.
这个电子像穿过金属一样很容易在晶体中迁移。