1.
Developments of Ohmic Contacts of p-Type GaN devices
p型GaN器件欧姆接触的研究进展
2.
High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films
HRXRD研究退火时间对Mg掺杂p型GaN薄膜应变状态的影响
3.
Delta-Doping and Surface Roughness Technique of P-GaN;
P型GaN的Delta掺杂及表面粗化研究
4.
Study on the Mechanism and Method of P-type Doping in GaN;
GaN材料P型掺杂机理及方法的研究
5.
Research on Etching GaN、P-type Ohmic Contact and Fabrication of GaN LED;
GaN的刻蚀、P型欧姆接触以及LED的研究
6.
A new p-n structure ultraviolet photodetector with p~--GaN active region
以弱p型为有源区的新型p-n结构GaN紫外探测器
7.
Electronic and magnetic properties of p,n type dopant and Mn co-doped GaN
p,n型掺杂剂与Mn共掺杂GaN的电磁性质
8.
p-GaN Ohmic Contacts for GaN-Based Laser Diodes;
GaN基激光器p-GaN欧姆接触的研究
9.
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
10.
Fabrication of n-ZnO/i-ZnO/p-GaN Heterostructure LEDs by PLD;
PLD方法制备n-ZnO/i-ZnO/p-GaN异质结LED
11.
Reduce Ohmic Contact Resistance to p-GaN Using InGaN/AlGaN Superlattice
用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻
12.
Influence of p-GaN/Ni/Au ohmic contact characteristics by Zn~+ implantation
Zn~+注入对p-GaN/Ni/Au欧姆接触特性的影响
13.
Effects of Pre-and Post-surface Treatment on Ni-based p-GaN Ohmic Contact
Ni基电极淀积前后表面处理对p-GaN欧姆接触的影响
14.
Study of the improvement of Ni/Au ohmic contact to p-GaN by Pt~+ implantation
p-GaN表面Ni/Au电极欧姆接触特性的Pt~+注入改性研究
15.
A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;
AlGaN/GaN高电子迁移率晶体管的模型研究
16.
Models of Compensation Ratio and Mobility of Wurtzite n-GaN;
纤锌矿n-GaN的补偿度及迁移率模型
17.
A New AIGaN/GaN HEMT Design
一种新型结构AlGaN/GaN HEMT设计
18.
Electromechanical Coupled Model on 2DEG in AlGaN/GaN HEMT
AlGaN/GaN HEMT 2DEG电致耦合模型的研究