1.
Design of Maskless Lithography Image System Based on DMD;
基于DMD的数字无掩模光刻成像系统设计
2.
electron chrome mask
电子束光刻用铬掩模
3.
The beam division method in maskless laser interference photolithography can be divided into wave-front division and amplitude division.
无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
4.
Thermal Deformation of EUV Mask and its Influence on Lithographic Performance;
极紫外光刻掩模热变形及其对光刻性能的影响
5.
Improving the Profiles of Imaging Patterns by Optimizing Mask in DMD-Based Maskless Photolithography
优化掩模分布改善数字光刻图形轮廓
6.
Profile Control and Detection of Holographically Recorded Photoresist Grating Masks;
光刻胶全息光栅掩模槽形的控制和检测
7.
Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;
介质膜光栅：光刻胶掩模占宽比和离子束刻蚀槽深的监控
8.
Proton beam writing of microstructures on Shanghai SPM system
高能聚焦质子束无掩模刻写方法研究初步
9.
photoresist controlled etch
光刻胶掩蔽控制腐蚀
10.
The research results show that IIL can get the high resolution more effectively than conventional optical lithography (OL).
研究结果表明，掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。
11.
Analysis of Nearfield for Photomask Based on Extended Fourier Diffraction Theory and Rigorous Coupled-Wave Method;
光刻仿真中二维掩模近场的扩展傅立叶分析和严格耦合波分析
12.
Vacuum-ultraviolet Blazed Silicon Gratings Anisotropically Wet-etched by a Native-oxide Mask
利用天然氧化层掩模的真空紫外硅闪耀光栅的湿法刻蚀制作
13.
Phase Shift Mask Monitor Scanner Focus;
利用相移光刻掩膜版监测光刻机台焦距
14.
Kohler illumination was used in proximity lithography, and a fly's eye lens was adopted to form multi-point source in order to uniform the light intensity on the mask plane.
接近式光刻中一般采用柯勒照明系统，并采用蝇眼透镜形成多点光源均匀掩模面的光场分布。
15.
Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask
PECVD淀积Si_3N_4作为光刻掩膜版的保护膜
16.
Hard surface photomask substrates
GB/T15871-1995硬面光掩模基板
17.
photoresist mask pattern
光致抗蚀剂掩模图形
18.
Lithography, as used in the manufacture of ICs, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.
光刻技术应用到集成电路制造中，就是将掩模版的几何图形转移到硅片表面的工艺过程。