1.
Preparation and Field Emission Properties of Algan Semiconductor Film
铝镓氮半导体薄膜制备及场发射性能研究
2.
Preparation and Characterization of AIN and GaN Nano-materials
氮化铝和氮化镓纳米材料的制备与表征
3.
Structure-properties of Diethylmetallic Azides Clusters of Aluminum and Gallium by DFT
叠氮二乙基铝和镓多聚体结构和性质的密度泛函理论研究(英文)
4.
ga al as semiconductor laser
镓铝砷半导体激光器
5.
High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask.
采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
6.
Research on Fabrication of Nanoporous GaN and Recovery of Damage to GaN Coursed by Dry Etching;
纳米多孔氮化镓制备及氮化镓干法刻蚀损伤回复研究
7.
Jelenski, A. "Gallium Nitride - New Material for Microwave and Optoelectronics."
"氮化镓-微波与光电元件的新材料."
8.
Low Frequency Noise Study on GaN-based Light Emitting Diodes;
氮化镓基发光二极管的低频噪声研究
9.
The Properties of GaN Schottky Photodetectors
肖特基型氮化镓紫外光电探测器性能
10.
Optical properties of amorphous GaN films deposited by sputtering
溅射制备非晶氮化镓薄膜的光学性能
11.
Research on the Structural Properties of Ga_nN Clusters
氮化镓(Ga_nN)团簇的结构性质研究
12.
Research on the Structural and Electronic Properties of Ga_n、Ga_nN、In_n Clusters;
镓（Ga_n）、氮化镓（Ga_nN）及铟（In_n）团簇的结构和电子性质研究
13.
Research on Formation of One-Dimensional GaN and Ga_2O_3 Nanostructures Ammoniating Ga_2O_3/V on Si Substrates;
硅基钒应变层制备氮化镓及氧化镓一维纳米结构的研究
14.
The Theoretic Study of Aluminum Hydrazide and Gallium Hydrazide by the Means of Molecular Design;
用分子设计法对铝、镓肼簇合物的理论研究
15.
Superbright InGaN single-quantum-well blue LED
超高亮度蓝色铟镓氮单量子阱发光二极管
16.
The Fabrication and Characterization of GaN One-Dimensional Nanomaterials and GaN Films;
氮化镓一维纳米材料及薄膜的制备与表征
17.
The Study on Photoelectric Behavior of GaN Film by Surface Photovoltaic Spectroscopy
利用表面光伏谱研究氮化镓薄膜的光电行为
18.
Preparation of GaN Nanowires and SiC Nanowires via CVD Method and Their Characterizations
氮化镓与碳化硅纳米线的CVD法制备与表征