1.
Study of Dislocation and Impurity in Sapphire and GaN;
蓝宝石衬底与GaN外延层中缺陷与杂质的研究
2.
Evaluation of Dislocation Densities in GaN Epilayers by Wet Chemical Etching
湿法化学腐蚀法估算GaN外延层中位错密度
3.
SOI Compliant Substrate for GaN Epitaxial Growth;
GaN外延生长中的SOI柔性衬底技术研究
4.
Study of GaN Epitaxial Growth on Si-based Micro Structures;
硅基微结构上的GaN外延生长研究
5.
Research on Laser Lift-off of GaN LED Thin Films
GaN LED器件外延膜的激光剥离的研究
6.
Analysis of Surface Transformation State of Epitaxial GaN-Based Films by Using RHEED
外延GaN基薄膜表面应变演变RHEED分析
7.
Lateral epitaxial overgrowth GaN thin film with MOCVD
MOCVD法横向外延过生长GaN薄膜
8.
Growth and Characterization of GaN by Hydride Vapor Phase Epitaxy;
氢化物气相外延生长GaN材料及其物性分析
9.
Study of Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire by MOCVD;
蓝宝石衬底MOCVD横向外延过生长GaN薄膜的研究
10.
Study of Surface Lattice Interval Transformmation of Epitaxial GaN-based Films by Using RHEED;
从RHEED图像间距分析外延GaN基薄膜表面晶格演变
11.
Effect of Heat Treatment on the Quality of Gallium Nitride Epilayers by MOCVD
热处理对MOCVD外延生长GaN薄膜性能的影响
12.
Material Defects and Reliability of GaN-Light Emitting Diode
GaN基LED外延材料缺陷对其器件可靠性的影响
13.
Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology
异质外延GaN薄膜中缺陷对表面形貌的影响
14.
The Ohmic Contacts to GaN HEMT Epilayers and Its Applications to Hall Measurements;
GaN HEMT外延材料的欧姆接触及其在霍尔测试上的应用
15.
Characterization of 4H-SiC Homoepitaxial layers
4H-SiC同质外延层的质量表征
16.
Method for Measuring Thickness of B-Doped p~+-Si Epitaxial Layer
掺硼p~+-Si外延层厚度的测试方法
17.
The Buffer Layer of Al-doped 4H-SiC
Al掺杂4H-SiC同质外延的缓冲层
18.
Research on the Bonding of Si/Si and Si/GaN Using Intermediate Metal Layers;
利用金属过渡层键合Si/Si、Si/GaN的研究