1.
Characterization of 4H-SiC Homoepitaxial layers
4H-SiC同质外延层的质量表征
2.
Method for Measuring Thickness of B-Doped p~+-Si Epitaxial Layer
掺硼p~+-Si外延层厚度的测试方法
3.
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T8758-1988砷化镓外延层厚度红外干涉测量方法
4.
Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T14142-1993硅外延层晶体完整性检查方法腐蚀法
5.
Study of Dislocation and Impurity in Sapphire and GaN;
蓝宝石衬底与GaN外延层中缺陷与杂质的研究
6.
Evaluation of Dislocation Densities in GaN Epilayers by Wet Chemical Etching
湿法化学腐蚀法估算GaN外延层中位错密度
7.
Control of Epitaxial Layer Transition Region on Heavy As-Doped Substrate for Schottky Devices
肖特基器件用重掺As衬底上外延层过渡区控制
8.
Test method for stacking fault density of epitaxial layers of silicon by interference-contrast microscopy
GB/T14145-1993硅外延层堆垛层错密度测定干涉相衬显微镜法
9.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
10.
Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Voltage-capacitance method
GB/T14146-1993硅外延层载流子浓度测定汞探针电容-电压法
11.
Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method
GB/T11068-1989砷化镓外延层载流子浓度电容-电压测量方法
12.
It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.
结果表明外延层具有平坦的异质结界面和良好的晶体特性。
13.
Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon;
多孔硅外延层转移SOI新材料制备与改性多孔硅发光性能的研究
14.
Research on Side-Illuminated Vertical-Cavity RCE Photodiodes and Fabrication of Taper Structures with Angles on Epitaxial Layer for InP-Based Matarials;
侧入射垂直腔RCE光探测器及InP基外延层楔型结构制备工艺的研究
15.
The Buffer Layer of Al-doped 4H-SiC
Al掺杂4H-SiC同质外延的缓冲层
16.
Smoking delays the response to treatment in episcleritis and scleritis
吸烟可延迟巩膜外层炎及巩膜炎对治疗的反应
17.
Research on the Preparation of Bi_2Te_3 Nanometer Thin Films by Electrochemical Atomic Layer Epitaxy;
电化学原子层外延制备Bi_2Te_3纳米热电薄膜的研究
18.
Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition
基于低温InGaP组分渐变缓冲层的InP/GaAs异质外延