1.
Study on construction technology of sole hole double deck tunnel in underground railway
地下铁道单洞双层隧道施工技术研究
2.
Comparison and Study of Construction Methods Of Fu Longping Double-decked Tunnel In Nanshan of Lanzhou;
兰州南山伏龙坪双层隧道施工方案比选与研究
3.
Analysis of Double-deck Tunnel Dynamic Response under the Train Load in the Subway
地铁列车荷载作用下双层隧道的动力响应分析
4.
Construction Technology and Mechanical Behavior Study on Twin-Arch and Double-Deck City Tunnel of Low-Burying;
城市浅埋双连拱双层隧道施工技术及力学行为研究
5.
The Influencing Factor of the Temperature Field of Cross-passage Construction by Freezing Method in Double-Deck Road Tunnels
双层越江隧道联络通道冻结法温度场影响因素
6.
Electronic transport properties of the multilayer structure double spin-filter tunnel junction
多层结构双自旋过滤隧道结中的电子输运特性
7.
Tray Buries Weak Stratum Diplonema Major Diameter Tunnel Risk Control Technique
浅埋软弱地层双线大直径隧道风险控制技术
8.
He suggested that a double railway-tunnel should be built.
他提议建一条双轨隧道，
9.
Construction Technics Control and Optimization of Double-Arch Tunnels in Complicated Geology Conditions;
高速公路复杂地层双联拱隧道施工工艺控制与优化
10.
Study of Effect of Tunnel Excavation with the Glass Method on the Stability of Artificail Fill Layer
隧道双侧壁导洞法施工对人工填土地层稳定性的影响研究
11.
Comparative Analysis on the Adaptability of CRD and Dual Sidewall Guide Pit for Passing through the Sand Layer of Xiamen Xiangan Seabed Tunnel
厦门翔安海底隧道CRD法和双侧壁法穿越砂层对比分析
12.
The Model Study of Optimal Selection between Double-Arch Tunnel and Separated Tunnel Projects;
双连拱隧道与分离式隧道优选模型研究
13.
The design and construction suggestions of bidirectional six lanes double-arch tunnel
双向六车道连拱隧道设计与施工建议
14.
Study on Construction Technology of Double-block Ballastless Track in tunnel
隧道内双块式无碴轨道施工技术研究
15.
Research on Layer 2 Tunneling Protocols and Implementation of L2TPv3 Data Layer;
二层隧道协议研究及L2TPv3数据层的实现
16.
The Theoretical Research about the Tunneling Magnetoresistance in Double Spin Filter Tunnel Junctions;
双自旋过滤隧道结中的隧穿磁电阻的理论研究
17.
Study on Polarization and Tunneling Magnetoresistance about Double Tunnel Junctions
双隧道结中极化率和隧穿磁电阻的研究
18.
The deposition mechanism is based on the tunneling of electron transition and double electrical layer of interface between semiconductor and electrolyte.
电沉积过程中薄膜的生长机理是基于电子跃迁的隧道效应和半导体／解液界面的双电层结构。