1.
Study on Conditioner for Polishing Pad in CMP;
化学机械抛光用抛光垫修整器的研究
2.
Study on Electrochemical Mechanism and Polishing Rate of Chemical-Mechanical Polishing of Copper;
铜化学-机械抛光电化学机理与抛光速率的研究
3.
Study on Conditioning Technology of Polishing Pad in CMP;
化学机械抛光中抛光垫修整技术的研究
4.
Chemical mechanical polishing for silicon wafer by composite abrasive slurry
利用复合磨粒抛光液的硅片化学机械抛光
5.
Study on CMP Slurry of CVD Diamond Film;
CVD金刚石膜化学机械抛光液的研制
6.
Electroplate and chemical mechanical polishing technology of ULSI
VLSI的电镀和化学机械抛光技术
7.
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
8.
ECMP of Cu in the Preparation Process of ULSI
ULSI制造中Cu的电化学机械抛光
9.
Study on Electrochemistry and Polishing Rate of Chemical Mechanical Polishing of Semiconductor Silicon Wafer;
半导体硅片化学机械抛光电化学与抛光速率研究
10.
Study on Pad Properties & Effects on Processing in CMP;
抛光垫特性及其对化学机械抛光效果影响的研究
11.
Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer
硅片化学机械抛光加工区域中抛光液动压和温度研究
12.
Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate
抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
13.
Influencing Factors of Conditioning Effect about Polishing Pad Conditioning for Chemical Mechanical Polishing
化学机械抛光用抛光垫的修整对修整效果的影响因素
14.
Study the application of pad in chemical mechanical polishing for sapphire wafer
抛光垫在蓝宝石衬底化学机械抛光中的应用研究
15.
Study on Chemical Mechanical Polishing of Tantalum Lithium Crystal Wafer;
光电子材料钽酸锂晶片化学机械抛光过程研究
16.
Fluorescence enhancement of Rh6G on mechanically polished metallic substrates
机械抛光金属衬底表面对Rh6G的荧光增强效应
17.
Study on Material Removal Mechanism for Non-contact CMP;
非接触化学机械抛光的材料去除机理研究
18.
Specification: Metal ingot, mechanically polished, the detailed specification can be customized in size according to your request.
形状：金属锭，机械抛光，每块大小可按顾客的要求。