1) MVBM
改进垂直布里奇曼法
1.
An integral ZnGeP2 single crystal with size of Φ20mm×30mm was obtained by Modi-fied Vertical Bridgman Method (MVBM).
用改进垂直布里奇曼法(MVBM)生长出尺寸为Φ20mm×30mm的ZnGeP2单晶体。
2) VBM
垂直布里奇曼法
1.
PbI_2 single crystal with three different colors were prepared using Vertical Bridgman Method(VBM).
以高纯Pb和I2单质为原料,采用两温区气相输运法(TVM)成功合成出单相PbI2多晶原料,并以此为原料,用垂直布里奇曼法(VBM)生长了3种不同颜色的PbI2单晶体。
2.
With the presynthesized polycrystals,the integral and gray-black ZnGeP2 single crystals with size of Φ15 mm×25 mm were obtained by modified Vertical Bridgman Method(VBM).
以此为原料,采用改进的垂直布里奇曼法(VBM)生长出尺寸为Φ15 mm×25 mm的ZnGeP2单晶体,呈黑灰色,外观完整、无裂纹。
3) vertical bridgman method
垂直布里奇曼法
1.
The high-quality copper single crystals have been successfully grown by the vertical Bridgman method(VBM),using a self-made growth furnace which is heated with four molybdenum disilicide rods.
本文采用自制的硅钼棒单晶生长炉和特制的镀碳石英生长坩埚,采用垂直布里奇曼法在30℃/cm的温度梯度下,以10 mm/d的下降速度生长出较高质量的铜单晶体。
4) Cd compensated vertical bridgman method
Cd补偿垂直布里奇曼法
1.
Growth of Cd_(0.9)Zn_(0.1)Te crystals by Cd compensated vertical bridgman method;
Cd补偿垂直布里奇曼法生长Cd_(0.9)Zn_(0.1)Te晶体
5) Seeded vertical Bridgman method
籽晶垂直布里奇曼法
6) Vertical Bridgman (VB) method
垂直布里奇曼(VB)法
1.
2 Te single crystal was successfully grown by using Vertical Bridgman (VB) method in our laboratory.
本实验采用垂直布里奇曼(VB)法成功地生长出Cd0。
补充资料：改进
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参考词条