1) Knudsen cell-mass spectroscopy
努森池-质谱
2) Knudsen cell
努森池
3) Knudsen effusion method
努森隙透
1.
Static method, boiling method and Knudsen effusion method have been introduced in this paper.
综述了测定纯物质低蒸气压的方法，包括静态法、沸点法、流逸法和努森隙透法等测定蒸汽压的方法。
4) knudsen number
努森数
1.
According to the experimental results,Reynolds number greater than 1(Re> 1)are the inertial flow segment;Knudsen number is greater than 10(Kn>10) are strong slippage segment and between them are slippage segment.
为了区分气体不同的渗流状态,在火山岩气藏渗流状态实验的基础上,利用努森数和雷诺数对渗流状态进行了划分。
5) Knudsen number
克努森数
1.
When Knudsen number is greater than 10,adsorption gas will display desorption,diffusion,migration.
在储层发育的纳微尺度空间内,天然气分子在其中的赋存状态以吸附为主,一旦微孔介质中天然气浓度发生变化,克努森数大于10时,吸附天然气将解吸、扩散、运移。
6) Knudsen diffusion
努森扩散
1.
The impediment enhancement can be explained by Knudsen diffusion and laminar flow,namely under certain pressure difference,the impediment enhancement is decided by the pinhole dist.
研究了磁控溅射镀陶瓷薄膜(SiOx)使PET基体阻隔性提高的机理,并对SiOx层的堆积结构做了假设及理论分析,结合SEM形貌表明:磁控溅射SiOx层存在层状结构及针孔随机分布,阻隔性的提高可由努森扩散和层流两种机理加以解释,即在一定的压力差下,阻隔性提高决定于针孔的分布、陶瓷层厚度以及SiOx层数。
2.
At the same time, there are laminated structures,the random and distributional pinholes under the SEM appearance,which indicate the barrier enhancement may explained by Knudsen diffusion and Poiseuille flow,namely under certain pressure difference,the impediment enhancement decided by the pinhole distribution,ceramic level thickness as well as the quantities of SiO_x layers.
研究了PET基体表面等离子辅助磁控溅射陶瓷薄膜(SiOx)阻隔性提高的机理,SEM形貌表明:磁控溅射SiOx层存在层状结构及针孔随机分布,阻隔性的提高可由努森扩散和层流两种机理加以解释,在一定的压力差下,阻隔性提高决定于针孔的分布、陶瓷层厚度以及SiOx层数。
3.
At the same time, there are laminated structures,the random and distributional pinholes under the SEM appearance,which indicate the barrier enhancement may explained by Knudsen diffusion and Poiseuille flow,namely under certain pressure difference,the impediment enhancement decided by the pinhole distribution,ceramic level thickness as well as the quantities of SiO_X layers.
根据不同SiOx层的堆积结构做了假设及理论分析,研究了PET基体表面等离子辅助磁控溅射陶瓷薄膜(SiOx)阻隔性提高的机理,SEM形貌表明:磁控溅射SiOx层存在层状结构及针孔随机分布,阻隔性的提高可由努森扩散和层流两种机理加以解释,在一定的压力差下,阻隔性提高决定于针孔的分布、陶瓷层厚度以及SiOx层数。
补充资料：克莱森-维斯利策努斯反应
分子式：
CAS号：
性质：用甲酸乙酯与具有活泼氢的化合物在钠或醇钠催化下进行缩合，得到甲酰基化的产物王的反应。实际上这是克莱森缩合反应的一个特例。
CAS号：
性质：用甲酸乙酯与具有活泼氢的化合物在钠或醇钠催化下进行缩合，得到甲酰基化的产物王的反应。实际上这是克莱森缩合反应的一个特例。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条