1) Di(thienylene vinylene)
二聚(2,5-噻吩乙烯撑)
1.
Electronic Structures of Di(thienylene vinylene) of Ground and Excited States:Vinylene-and Ring-Substitution Effects
二聚(2,5-噻吩乙烯撑)基态和激发态的电子结构:桥基和芳环取代的影响
2) Poly(3,4-ethylenedioxythiophene)
聚乙撑二氧噻吩
1.
Preparation and Characterization of Poly(3,4-ethylenedioxythiophene)/Carbon Nanotube Nanocomposites;
聚乙撑二氧噻吩/碳纳米管复合物的合成与表征
2.
The degradation of poly(3,4-ethylenedioxythiophene) (PEDOT) films at an anode in an aqueous solution has been systemically studied.
研究了聚乙撑二氧噻吩(PEDOT)膜在水溶液中的阳极降解过程。
3.
Poly(3,4-ethylenedioxythiophene) (PEDOT) was successfully synthesized in aqueous system by an acid doping method.
通过酸掺杂方法,成功地在水体系中合成出了聚乙撑二氧噻吩,并用傅立叶变换红外光谱证明了产物的分子结构。
3) PEDT/PSS
聚乙撑二氧噻吩/聚苯乙烯磺酸
4) poly(3,7-N-octyl phenothiozinyl cyanoterephthalylidene)
聚1,4二(1-氰基)乙烯基撑苯撑3,7-N-辛基-吩噻嗪撑
5) poly(3,4-ethylenedioxythiophene)
聚3,4-乙撑二氧噻吩
1.
Conducting polymer poly(3,4-ethylenedioxythiophene)(PEDOT) film electrodes were prepared by electrochemical polymerization from aqueous solution containing 0.
以水为溶剂,分别选用对甲苯磺酸钠、高氯酸锂、硫酸钠为支持电解质,用电化学法合成聚3,4-乙撑二氧噻吩(PEDOT)膜。
2.
Conductive polyacrylonitrile fiber modified by poly(3,4-ethylenedioxythiophene) was fabricated successfully by in-situ chemical oxidation polymerization.
采用原位化学氧化聚合方法在聚丙烯腈纤维表面生成聚3,4-乙撑二氧噻吩,制备得到纤维表面均匀覆盖聚3,4-乙撑二氧噻吩的改性导电纤维,其电导率约为1×10-3S/cm。
3.
Electrochemical Properties of Poly(3,4-ethylenedioxythiophene)/ Manganese Oxide Synthesized by Interfacial Polymerization
采用界面聚合法制备聚3,4-乙撑二氧噻吩/二氧化锰(PEDOT/MnO2)纳米复合物。
补充资料：2-噻吩乙腈
分子式 C6H5NS
分子量 123.18
CAS号 20893-30-5
2-噻吩乙腈为无色透明体,沸点115~120℃/2.93kPa;120~121℃/2.8kPa;闪点101℃。折光率n20D1.5420;n24D1.5399。相对密度d2041.157;d2341.153。溶于乙醇、丙酮、乙醚和氯仿,不溶于水。
用途;2-噻吩乙腈主要用于合成镇痉药和半合成抗菌素
分子量 123.18
CAS号 20893-30-5
2-噻吩乙腈为无色透明体,沸点115~120℃/2.93kPa;120~121℃/2.8kPa;闪点101℃。折光率n20D1.5420;n24D1.5399。相对密度d2041.157;d2341.153。溶于乙醇、丙酮、乙醚和氯仿,不溶于水。
用途;2-噻吩乙腈主要用于合成镇痉药和半合成抗菌素
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条