1) mensuration of arsenic and antimony
砷锑测定
3) antimony determination
锑测定
1.
The paper describes the impact of thallium on antimony determination results in the zinc sulfate solution and presents a modified malachite green spectrophotometery adopted for determining antimony in case the thallium content is too high or too low,thus meeting the production requirements.
介绍了铊对硫酸锌溶液中锑测定结果的影响,在铊含量高或者过低时,采用改进后的孔雀绿分光光度法测定锑,可满足生产的要求。
5) determination of As
砷的测定
1.
The optimum conditions for the HG-AFS determination of As were studied and a AFS method for the determi- nation of As in steel is proposed.
该方法简便快捷,用于钢材中砷的测定结果令人满意。
6) determination of As and Hg
测定砷、汞
补充资料：砷锑化镓铟
分子式：InxGa1-xSbyAs1-y o≤x≤1 o≤y≤1
CAS号：
性质：周期表第III、V族元素化合物半导体。为混合晶体，闪锌矿型结构。存在间接带隙半导体区。禁带宽度0.1～1.42eV。为制作2～4μm红外发光和激光器件的材料。可在锑化镓、砷化铟衬底上用液相外延、分子束外延等方法制备。
CAS号：
性质：周期表第III、V族元素化合物半导体。为混合晶体，闪锌矿型结构。存在间接带隙半导体区。禁带宽度0.1～1.42eV。为制作2～4μm红外发光和激光器件的材料。可在锑化镓、砷化铟衬底上用液相外延、分子束外延等方法制备。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条