Considering parasitic effects resulting from bond pad and input electrostatic discharge(ESD)protection diodes,the optimization of the input matching and noise performance is analyzed,and a narrowband inductor model is applied to the circuit design and optimization.

6μm BiCMOS process, because of the different internal base resistance, CEB, CEBE structures have better SNAPNACK effect and a high ESD protection efficiency than CBE, CBEB structures.

The key problem originates from the complex interaction between the ESD protection circuitry and the core RF IC circuit under protection.

In this thesis work, some CMOS on-chip ESD protections are investigated.

This paper presents the complex interactions between the ESD protection network and the core circuit being protected,and RF ESD evaluating technologies,to provide ESD designers with a reference in RF ESD protection design.

This paper presents some new ESD protection structures for RF ICs,including dual-direction and all-mode ESD protection structures,and key aspects on ESD protection design are discussed.

Therefore,the ESD protection of CMOS devices becomes not only so important but also more difficult.

Four modules are included in the SPDT analog switch, for example, MOS switch circuit, driver circuit, buffer circuit, and ESD protection circuit.

This paper describes the layout of TFT-LCD drive chip ESD protection.

This paper describes the layout of TFT_LCD driver IC\'s ESD protection.

The ESD failure modes,failure mechanism and ESD protection circuit are mainly reviewed in the paper.

An ESD protection circuit for IC cards is described,which is based on CMOS process.

And an all-chip ESD protection circuit structure for a mixed signal IC was constructed,in which a diode forward biased discharge mode was used to achieve sufficient ESD robustness at small parasitic capacitance.