1) primary silicon growth temperature
初晶生长温度
1.
08%), the average grain size of the primary silicon decreases, the primary silicon growth temperature TG and its difference ΔTG increase; the different holding time has little effect on the average grain size of the primary silicon and ΔTG.
08%),初晶Si平均晶粒尺寸减小,初晶生长温度TG及其差值ΔTG不断增大;在变质处理后不同的保温时间下平均晶粒尺寸及ΔTG都变化不大。
2) liquidus temperature
初晶温度
1.
Effect of NaCl and LiF on liquidus temperature of molten cryolite-based aluminum electrolyte;
NaCl和LiF的添加对铝电解质初晶温度影响的研究
2.
Study on new device for testing liquidus temperature of aluminium electrolyte and mathematical model of liquidus temperature;
铝电解质初晶温度测定装置及初晶点数模的研究
3.
Study on direct determination of liquidus temperature of aluminium electrolyte;
直接测定铝电解质初晶温度的研究
3) growth temperature
生长温度
1.
Effect of growth temperature on crystal quality and surface morphology of InAs/GaSb superlattices;
生长温度对InAs/GaSb超晶格晶体结构和表面形貌的影响
2.
Influence of growth temperature on properties of AlGaInN quaternary epilayers
生长温度对AlGaInN四元合金薄膜性质的影响
3.
GaAs epitaxial layer was charactorized by changing the growth temperature of GaAs buffer layer.
通过改变GaAs过渡层的生长温度对GaAs外延层进行了表征,利用扫描电镜(SEM)和X射线衍射仪研究了表面形貌和晶体质量,优化出满足高效太阳能电池要求的高质量GaAs单晶层生长条件。
4) length of root stalk
初生根长度
1.
Effect of the length of root stalk on the micro -nuclei frequency in root-tip cells of Vicia faba;
初生根长度对蚕豆根尖细胞微核率影响的研究
5) initial crystallization temperature
等溶初晶温度
1.
According to the regression equations of initial crystallization temperature(ICT), the solubility of alumina and density at the temperature of 20 ℃ above its ICT of (2.
0 )NaF·AlF3 ( 0～ 5% )LiF ( 0～ 1 5% )CaF2 系熔体初晶温度、变温氧化铝溶解能力和变温密度的研究 ,首次得到了氧化铝溶解能力为 6% ,8%和 1 0 %时温度范围在 91 0～ 950℃的等溶初晶温度和密度在2 。
6) crystal growth temperature-field
晶体生长温场
补充资料：人之初
人之初
儿科著作。5卷。唐成之抄录。此书首为绪论，内容包括护胎论、保产论、变蒸论、小儿纯阳论等；次论诊法，指纹脉诀阐论，包括诊视虎口、三关，小儿指形，小儿脉法，四脉主病证歌诀等，另附图2幅；其后着重介绍胎寒、胎热、急慢惊、脱肛、五淋等儿科38种病证证治，并介绍按、摩、揉、推、运、汗、吐等26法。另附有关儿科诊治和推拿部位之插图共58幅。书末列述验方162首。现存1916年唐成之抄本。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条