1) grain boundary ductility-dip
晶界失塑
2) crystal lattice mismatch
界面晶格失配
3) model of grain boundaries recombination and losses
晶界复合损失模型
1.
In this paper, using Rothwarf s model of grain boundaries recombination and losses, calculated pho-tocurrents and conversion efficiencies on CdS/CuInSe2 polycrystalline heterojunctions solar cells.
用Rothwad的晶界复合损失模型对CdS/CuInSe_2多晶异质结太阳电池的光电流和转换效率进行计算,结果发现掺杂浓度N_A有一个最佳值(—10~(15)cm~(-3),在这个值附近,当晶粒半径R=1μm时,电池的短路电流达33。
4) plastic crystal
塑晶
1.
Through doping lithium salt to the plastic crystal at room temperature, ionic conductivity of plastic crystal has reached 10~(-3) S ? cm~(-1), but the plastic crystal material has poor mechanical properties.
据最近的文献报道,塑晶锂离子固体电解质的室温离子电导率达到10~(-3)S·cm~(-1),但其成膜加工性能不好。
5) grain boundary
晶界
1.
Dynamic process simulation of solute grain boundary segregation;
溶质原子晶界偏聚动力学过程的数值模拟
2.
Methodological probe into grain boundary etching of molybdenum disilicide based materials;
二硅化钼基材料的晶界腐蚀方法探讨
6) crystal boundary
晶界
1.
The chemical composition at the crystal boundary of transparent ceramics was observed and the concentration distribution of rare earth oxide in stable state was measured by electron microprobe analysis.
以ＥＰＭＡ法观测透明陶瓷晶界处的化学组成及稀土氧化物的定态浓度分布，用非平衡态热力学理论分析晶界偏析行为。
2.
Al_2O_3distributed along crystal boundary,silicate impurities,separated carbon compound and σ phase together brought about crystal boundary weakening and resulted in high sensitivity for interdendritic corrosion.
沿晶界分布的A l2O3和硅酸盐杂质、析出碳化物、σ相,它们共同构成了晶界弱化的因素,致使晶间腐蚀的敏感性加大。
3.
The application of electroscope and pulse polishing technology enables the field ion microscope atomprobe (FIM AP) on the sample to locate itself successfully the crystal boundary, moreover, makes the dialing subatomprobe in the range to be efficiently analyzed.
应用电子显微镜和脉冲抛光技术 ,成功控制了晶界在场离子显微镜—原子探针试样中的位置 ,使其处于场离子显微镜—原子探针的有效分析范围内。
补充资料：晶界
分子式：
分子量：
CAS号：
性质：晶界是结构相同而取向不同晶体之间的界面。在晶界面上，原子排列从一个取向过渡到另一个取向，故晶界处原子排列处于过渡状态。
分子量：
CAS号：
性质：晶界是结构相同而取向不同晶体之间的界面。在晶界面上，原子排列从一个取向过渡到另一个取向，故晶界处原子排列处于过渡状态。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条