1) 808 nm laser diode
808nm半导体激光器
1.
The technology of non-injection regions for improving the catastrophic optical damage (COD) level of the 808 nm laser diode was introduced.
采用腔面电流非注入技术,提高了808nm半导体激光器灾变性光学损伤(COD)阈值。
2) high-power 808nm semiconductor laser
大功率808nm半导体激光器
4) semiconductor laser
半导体激光器
1.
A Design of semiconductor laser temperature control;
半导体激光器的温度控制器的设计
2.
Stable power semiconductor laser based on MSP430;
基于MSP430单片机的稳功率半导体激光器的设计
3.
Experimental study on the spectral stabilization of the output of semiconductor laser;
半导体激光器输出光谱稳定性的实验研究
5) Diode laser
半导体激光器
1.
The design and implementation of a low-noise diode laser drive power;
低噪声半导体激光器驱动电源的研制
2.
Reliability and lifetime assessment of high-power diode laser;
高功率半导体激光器的可靠性与寿命评价
3.
Inter-mode intensity correlations in a free-running diode laser;
自由运转半导体激光器边模间的强度关联
6) laser diode
半导体激光器
1.
Design of optics system for laser diode beam collimation;
半导体激光器光束准直系统设计
2.
Far-field distribution measurement of a laser diode by using CCD with imaging and calibration technique;
成像标定法测量半导体激光器慢轴远场分布
3.
The Study of Frequency Stabilization Technology for Laser Diode;
半导体激光器稳频技术研究
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条