1) exchange-biased spin-valve
交换偏置自旋阀(EB-SV)
1.
The problems and disadvantages of exchange-biased spin-valve MTJs as well as the advantages of the promising pseudo-spin-valve junctions are illustrated.
文章还阐明了交换偏置自旋阀(EB-SV)型MTJs的问题和不足,以及新兴的赝自旋阀(PSV)型MTJs的优势。
2) exchangebiased spinvalve
偏置型自旋阀
1.
It was found that through annealing the multilayers showed better exchangebiased spinvalve GMR characters.
通过磁场中退火得到好的偏置型自旋阀ＧＭＲ效应。
3) Exchange bias
交换偏置
1.
The influence of interfacial FeMn addition on the CoFe/CrPt exchange biased system;
界面掺杂FeMn对CoFe/CrPt交换偏置体系的影响
2.
The exchange bias in ferromagnetic/antiferro-magnetic bilayers under the stress field;
外应力场下铁磁/反铁磁双层膜系统中的交换偏置
3.
The influence of (Ni_(0.81)Fe_(0.19))_(1-x)Cr_x seed layer on the exchange bias of NiFe/FeMn bilayers;
(Ni_(0.81)Fe_(0.19))_(1-x)Cr_x作为种子层对NiFe/FeMn交换偏置的影响
4) exchange biasing
交换偏置
1.
Effect of magnetization on exchange biasing in Co-Ni/FeMn bilayers;
Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响
2.
Perpendicular and longitudinal exchange biasing inferromagnet/antiferromagnet multilayers;
铁磁/反铁磁多层膜中纵向和垂直交换偏置
3.
Exchange biasing and coercive field of molecular\|beam\|epitaxy\|grown Fe/Fe\-\{50\}Mn\-\{50\} bilayers have been investigated by Surface Magneto\|optical Kerr Effect(SMOKE) and ferromagnetic resonance measurements.
利用表面磁光克尔效应和铁磁共振对分子束外延生长的Fe/Fe50 Mn50 双层膜的交换偏置场和矫顽力进行了研究 ,实验结果表明 ,当反铁磁层厚度小于 5 5nm时 ,不出现交换偏置 ,而当大于这一厚度时 ,出现交换偏置 ;大约在7nm时 ,达到极大值 。
5) Spin exchange
自旋交换
6) Exchange bias field
交换偏置场
1.
Effect of texture and interfacial roughness on the exchange bias field of NiFe/FeMn films;
织构和界面粗糙度对NiFe/FeMn双层膜交换偏置场的影响
2.
With the increase of the thickness of the FeMnC film,the exchange bias field,the coercive force and the remnant magnetism decreased.
我们用磁控溅射方法制备了FeMn/FeMnC/Co薄膜,研究了FeMn-FeMnC-Co体系的交换偏置现象,并探讨了铁磁薄膜FeMn/Co的交换偏置场相对于插入层FeMnC厚度的变化,发现随插入层FeMnC厚度的增加,交换偏置场Heb、矫顽力及剩磁比均减小。
3.
By adjusting the Mn concentration,we systematically investigated the magnetic properties,especially the exchange bias field( H ex ),in Ni 81 Fe 19 /Ni 100- x Mn x bilayers.
通过调整Mn的成分 ,系统地研究了Ni81 Fe1 9 Ni1 0 0 -xMnx 双层膜的磁学性质 ,特别是交换偏置场 (Hex)的变化 。
补充资料：自旋-自旋弛豫
自旋-自旋弛豫
磁共振成像术语。又称T2弛豫或横向弛豫(transverse relaxation)，指垂直于外磁场B0方向的磁化矢量的指数性衰减过程。磁共振成像时，对置于外磁场B0中的自旋系统施加90°射频脉冲，则自旋系统被激励，其净磁化矢量指向与外磁场B0垂直；射频脉冲终止后，被激励的质子与邻近的原子核之间发生相互作用，逐渐失去相位，净磁化矢量指向恢复与外磁场平行，该过程称自旋-自旋弛豫。自旋-自旋弛豫过程无能量交换。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条