1) Predeposition temperature
预沉积温度
2) deposition temperature
沉积温度
1.
Influence of deposition temperature on the structure and thermal stability of a-C: F films;
沉积温度对a-C:F薄膜结构与热稳定性的影响
2.
Influences of deposition temperature and rate on mechanical stress of electron beam deposited ZnSe thin films
沉积温度和速率对电子束沉积ZnSe薄膜应力特性的影响
3.
MoS2-Ti composite coatings were deposited by unbalanced magnetron sputtering system,the effects of deposition temperature on the structure and mechanical performance of coating were studied.
采用非平衡磁控溅射沉积技术制备MoS2-Ti复合薄膜,研究了沉积温度对薄膜的结构和性能的影响。
3) substrate temperature
沉积温度
1.
The influence of substrate temperature and postannealing on the dielectric properties are investigated.
5TiO3介电薄膜,研究了沉积温度和退火处理对薄膜介电性能的影响。
2.
We have studied the influence of substrate temperature on structural characteristics,the stress,morphology and photoluminescence(PL)properties for ZnO films by XRD,AFM,and Grating-Spectrometer.
利用X射线衍射分析(XRD)、原子力显微镜(AFM)、光栅光谱仪等技术研究了沉积温度对ZnO薄膜的结构、应力状态、表面形貌和发光性能的影响。
3.
The effects of substrate temperature and post deposition vacuum annealing on structural, electrical and optical properties of ZMO:Ga thin films were investigated.
采用各种分析手段研究了沉积温度和真空退火处理对薄膜结构、表面形貌及光电性能的影响。
4) depositing temperature
沉积温度
1.
The effects of depositing temperature on structure and optical properties of resistant-boat evaporated LaF_3 single layers were investigated.
研究了沉积温度对热舟蒸发氟化镧薄膜结构和光学性能的影响,沉积温度从200℃上升到350℃,间隔为50℃。
2.
Various gettering films of polysilicon were deposited at different temperatures and the influence of depositing temperature on the warping parameters of polished wafers was investigated.
实验结果表明,随着沉积温度的不断升高,多晶硅晶粒不断长大,晶界减少,多晶硅薄膜应力逐渐降低,吸杂硅片的翘曲度逐渐减小,综合考虑硅片的吸杂效能与弯曲翘曲度控制,650～680℃为多晶硅薄膜最佳沉积温度。
6) preheating deposit
预热沉积
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条