The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.

Discontinuities of the slope of the curve at the flat form of Coulomb staircase compared to double barrier tunnel junction system, which is caused by the change of the electron num.

It can also be used to analyze the influence of tunnel resistances on the Coulomb staircase and the conductance oscillations quantitatively and to obtain the condition for the generation of single electron phenomena.

Within the framework of Eikonal multiple-scattering theory, the Coulomb effect in π±-40Ca elastic scattering is studied.

To reduce the influence of multistip-like behavior in rapid prototyping manufacturing on the precision of parts,the mathematical principle of multistip-like behavior as well as the corresponding precision loss of parts and the characteristic distortion or defect were analyzed.

The I-V curve of the tunneling junction at room temperature clearly indicates the Coulomb blockade effect.

The studies contain the quantum squeezing effect in the mesoscopic LC circuit and the Coulomb blockade effect in the mesoscopic capacitance coupling RLC circuit.

We observed Coulomb charging effect and the discrete energy level structure of Ge quantum dots with the typical diameter 13nm.