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1)  static recrystallization critical temperature
静态再结晶临界温度
1.
The results show that the static recrystallization critical temperature of tested steels decreases with increasing the strain and increass with increasing the initial austenite grain size.
结果表明:含Nb微合金钢静态再结晶临界温度随应变量增大而降低;随原始奥氏体晶粒尺寸增加而升高。
2)  static recrystallization
静态再结晶
1.
Studies of static recrystallization of new nickel-based alloy;
新型镍基合金静态再结晶规律研究
2.
Effect of C and N on static recrystallization in vanadium microalloyed non-quenched/tempered steels;
C和N含量对V微合金非调质钢静态再结晶量的影响
3.
Behavior of Static Recrystallization of 0.75C-0.11V Microalloy Steel;
0.75C-0.11V微合金钢的静态再结晶行为
3)  static recrystallization grain
静态再结晶晶粒
1.
The following up grain growth with the deformation temperature,holding time and the influence of deformation temperature,deformation value,initial grain size on static recrystallization grain size have been investigated by means of thermal simulator“ Gleeble-1500” for nuclear steel SA508c1 3 The necessary material models for numerical simulation of recrystallization have been establishe
3核电用钢进行了恒温压缩模拟,分析了变形温度、变形程度、原始晶粒直径对静态再结晶晶粒尺寸的影响,另外还研究了晶粒的长大随温度、时间的变化情况。
4)  Recrystallization Temperature
再结晶温度
1.
Effect of manufacturing technologies of ingot on the recrystallization temperature of pure tantalum plate;
锭坯生产工艺对纯钽板再结晶温度影响的研究
2.
Influences of rare earth elements on recrystallization temperature of pure copper and BFe10-1-1 alloy
稀土对纯铜和BFe10-1-1合金再结晶温度的影响
3.
The results show that the high temperature mechanical properties of molybdenum wire have been improved markedly by Si、Al、K doping; the recrystallization temperature of molybdenum wire has been increased by 550~600℃ via Si、Al、K doping which generates an interlocked grain structure; the strengthening phase of Si、Al、K doped molybdenum wire is not only the K.
通过透射电镜(TEM)、扫描电镜(SEM)、能谱分析(EDS)对Si、Al、K掺杂烧结钼条和退火钼丝的组织形貌进行了跟踪检测分析;通过DSC和硬度试验检测Si、Al、K掺杂钼丝的再结晶温度;通过热模拟试验对纯钼条和Si、Al、K掺杂钼条的高温综合力学性能进行了对比分析。
5)  static isothermal crystallization rate
静态等温结晶速度
6)  austenite static recrystallization
奥氏体静态再结晶
补充资料:二次再结晶(见再结晶晶粒长大)


二次再结晶(见再结晶晶粒长大)
secondary recrystallization

erCI 201」le」Ing二次再结晶(seeondary reerystallization) 见再结晶晶杠长大。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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