1) nano-sized Si3N4
纳米氮化硅(Si3N4)
1.
The result showed that the macromolecular modifier were successfully grafted onto the surface of nano-sized Si3N4 particles,an organic coating layer was formed.
采用自制的丙烯酸丁酯-甲基丙烯酸甲酯-乙烯基三乙氧基硅氧烷(BA-MMA-VTES)大分子表面改性剂对纳米氮化硅(Si3N4)陶瓷粉体进行表面包覆改性,将改性后的纳米Si3N4粉体加入到耐水解聚氨酯(PU)树脂中成革,并进行傅立叶变换红外光谱、透射电子显微镜等分析及力学性能测试。
2) nano-Si_3N_4
纳米氮化硅
1.
Nano-size Si_3N_4 was modified with a macromolecular coupling agent which was synthesized by ourselves,and nano-Si_3N_4/nitrile-butadiene rubber(NBR) composites were prepared by direct blending.
采用试验室自制的大分子偶联剂对纳米氮化硅进行表面处理,并制备 Si_3N_4/NBR 纳米橡胶复合材料。
3) Nano-Si3N4
纳米氮化硅
1.
The structure and surface properties of modified nano-Si3N4 were systematically investigated by FTIR,TEM,XPS etc.
采用溶液聚合法合成了丙烯酸丁酯-甲基丙烯酸-丙烯腈(BA-MAA-AN)三元共聚物,使用该三元共聚物作为大分子表面改性剂对纳米氮化硅进行表面处理,运用TEM、FTIR、XPS等仪器对处理后的纳米氮化硅粉末的结构及表面特性进行系统地研究。
2.
Silicon nitride ceramic was fabricated using Si3N4 powder of micron and nano-Si3N4, adding Al2O3 and Y2O3 to reinforce sintering, by isostatic pressing and sintered silicon nitride (SSN).
本文以亚微米级氮化硅为起始原料,加入纳米氮化硅来增强基体,添加氧化铝和氧化钇为烧结助剂,等静压成型,采用无压烧结的方式来制备具有优良性能的氮化硅陶瓷。
3.
The nano-Si3N4 dispersibility in acetone was characterized by the volume of suspending layer and TEM.
本研究采用聚乙二醇(PEG1000)作为表面改性剂对纳米氮化硅进行表面改性处理。
4) modified nano-Si3N4
改性纳米氮化硅
1.
The influence of addition level of nano-Si3N4 modified by macromolecular coupling agent on the properties of modified nano-Si3N4/NBR composites was investigated.
采用大分子偶联剂改性纳米氮化硅,研究改性纳米氮化硅用量对改性纳米氮化硅/NBR复合材料性能的影响。
5) nano-Si3N4 ceramics
纳米氮化硅陶瓷
1.
The nano-Si3N4 ceramics with size of about 100nm were produced by hot press sintering and the thermal shock resistance was investigated.
研究结果表明,纳米氮化硅陶瓷表现出原始短裂纹扩展特征;起始粉末粒度对氮化硅陶瓷的力学性能和抗热震性有一定影响。
6) Si3N4 nanowires
氮化硅纳米线
1.
X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the effects of reaction conditions (catalysts,reaction temperature and time) on the crystalline phases and morphologies of the carbothermal reaction products in the sol-gel synthesis of Si3N4 nanowires.
采用X射线衍射和扫描电子显微镜技术,考察了溶胶-凝胶法制备氮化硅纳米线过程中反应条件(添加剂种类和含量、反应时间以及反应温度)对碳热还原产物组成和形貌的影响。
补充资料：氮化硅膜
分子式：
CAS号：
性质： 硅氮化合物的薄膜。可用化学气相沉积和溅射法制备，通常采用等离子体化学气相沉积(PCVD)制备，沉积温度低于300℃。由于Si3N4具有高硬度(块体硬度HV l7.2GPa)和优良的化学稳定性，它是很受重视的耐磨抗蚀膜，常用作微电子技术电绝缘层。但因Si3N4膨胀系数低，当沉积在金属基材上时，产生较大的界面应力，对基体附着差。
CAS号：
性质： 硅氮化合物的薄膜。可用化学气相沉积和溅射法制备，通常采用等离子体化学气相沉积(PCVD)制备，沉积温度低于300℃。由于Si3N4具有高硬度(块体硬度HV l7.2GPa)和优良的化学稳定性，它是很受重视的耐磨抗蚀膜，常用作微电子技术电绝缘层。但因Si3N4膨胀系数低，当沉积在金属基材上时，产生较大的界面应力，对基体附着差。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条