1) trapping layer
俘获层
1.
With the coming of 45 nm and 32 nm technology node,the performance of the devices with the conventional Si3N4 charge trapping layer is limited.
随着45nm和32nm技术节点的来临,传统Si3N4作为电荷俘获存储器的俘获层已经使器件的性能受到了限制。
2) oxide hole-traps
氧化层空穴俘获
1.
Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.
基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式。
3) E-capture
E层电子俘获[冶]
4) K capture
K-层电子俘获
5) K-capture
K层电子俘获[能]
6) formation capture cross section
地层俘获截面
补充资料：俘获
俘虏和缴获：～甚众。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条