1) doping amount of Fe2O3
Fe2O3掺杂量
1.
Based on the DSC thermograms of prepared CTR samples,the relation between the doping amount of Fe2O3 and the phase transition point of CTR was determined.
用电子陶瓷工艺制备了三种不同掺杂比例的临界热敏电阻CTR(Critical Temperature Resister),根据样品对应的热谱中的相变点,找出Fe2O3掺杂量与相变点的关系。
2) Fe2O3 doping
Fe2O3掺杂
3) Fe_2O_3 doping TiO_2
Fe2O3掺杂TiO2催化剂
1.
The various affecting factors were studied on ultrasonic degradation of methyl orange in the presence of Fe_2O_3 doping TiO_2 catalyst prepared in laboratory in this paper.
研究表明在Fe2O3掺杂TiO2催化剂作用下超声降解甲基橙的效果非常明显。
4) boron-doped content
硼掺杂量
1.
Relationship between boron-doped content and single polarization single mode band-width of W-tunneling optical fiber is analysed.
分析了W 型单模单偏振光纤中 ,椭圆内包层硼掺杂量与单模单偏振带宽的关系 ,得出了长W 型单模单偏振光纤的带宽与内包层硼掺杂量的大小无关 ,它只由光纤几何结构以及内包层折射率深度确定 ,而对于短W 型单模单偏振光纤 ,硼掺杂量的增加可以增大截止基模能量损耗 ,从而适度提高其消光比和有效带宽。
5) Co doping amounts
钴掺杂量
1.
Effect of Co doping amounts on microstructure and magnetic properties of MnZn ferrite;
钴掺杂量对锰锌铁氧体显微结构和性能的影响
6) dopant amount
掺杂量
1.
Sb-doped SnO_2 films(antimony-doped tin oxide,ATO) were prepared by chemical vapor deposition(CVD) method to analyze the effect of dopant amount on the structure and properties of the ATO films.
采用化学气相沉积法(CVD)制备了Sb掺杂SnO2薄膜(ATO),研究了Sb掺杂量对ATO薄膜结构和性能的影响。
2.
The remaining dopant amount is measured after reducing and sintering in this paper.
测试分析了不同掺杂量的材料经过还原和烧结后获得的 Si、Al、K 残留量,并对不同 Si、Al、K 掺杂量的钼丝的再结晶行为进行了研究。
补充资料：Fe2o3
三氧化二铁
三氧化二铁又叫氧化铁，是铁锈的主要成分
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条