1) P-C compo-doping
P-C复合掺杂
2) composite doping
复合掺杂
1.
Influence of composite doping on magnetic properties for NiCuZn ferrite;
复合掺杂对NiCuZn铁氧体磁性能的影响
2.
A modified cathode material of LiNi1/3Co1/3Mn1/3O2 with the layered structure was prepared by composite doping with F and Si ions under oxygen atmosphere using (Ni1/3Co1/3Mn1/3)(OH)2 as the precursor obtained by co-precipitation method.
以共沉淀法合成的(Ni1/3Co1/3Mn1/3)(OH)2为前驱体,在氧气氛中合成了层状正极材料LiNi1/3Co1/3Mn1/3O2,用F、Si离子复合掺杂的方法对其进行改性。
3.
0-10 mol% nano-Sm2O3,nano-ZrO2(3Y) powder was used as raw materials for composite doping.
0-10%)的纳米Sm2O3粉进行复合掺杂。
3) Co-doping
复合掺杂
1.
Studies on the Co-doping Modified Spinel LiMn_(1.98)Cr_(0.02)O_(4-y)Cl_y;
复合掺杂改性的尖晶石LiMn_(1.98)Cr_(0.02)O_(4-y)Cl_y的研究
2.
Electrochemical performance of spinel LiMn_2O_4 with Li and Al co-doping
Li、Al复合掺杂的尖晶石LiMn_2O_4的电化学性能
3.
The co-doping modified spinel LiMn1.
<正>采用改进的高温固相法合成了阴阳离子复合掺杂改性的锂离子电池尖晶石结构正极材料LiMn1。
4) codoping
复合掺杂
1.
To investigate the effect of La(III) and Sr(II) codoping on the electrochemical performance of the samples,simulated batteries with the prepared codoping nickel hydroxide as cathode active material and metal hydride as counter electrode were assembled.
采用微乳液快速共沉淀法制备稀土La(III)与Sr(II)复合掺杂非晶态氢氧化镍粉体。
5) complex additives
复合掺杂剂
1.
The introduce of complex additives made the cubic structure of the sample stable,and the conductivity was enhanced due to the increase of the crystal lat- tice and the oxygen transfer passage radii,reaching 0.
复合掺杂剂的加入使材料保持稳定的立方结构,且增大了样品晶格常数和氧空位迁移半径R值。
6) p-doping
p型掺杂
1.
This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL .
使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。
2.
This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present.
本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。
3.
In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.
在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。
补充资料:[styrene-(2-vinylpyridine)copolymer]
分子式:
分子量:
CAS号:
性质:学名苯乙烯-2-乙烯吡啶共聚物。微黄色粉末或透明小颗粒晶体。无臭,无味。不溶于水,溶于酸、乙醇、丙酮、氯仿。有抗水、防潮性能,适用于多种药片的包衣等。
分子量:
CAS号:
性质:学名苯乙烯-2-乙烯吡啶共聚物。微黄色粉末或透明小颗粒晶体。无臭,无味。不溶于水,溶于酸、乙醇、丙酮、氯仿。有抗水、防潮性能,适用于多种药片的包衣等。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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