1) Codoped spinel silicon nitride with C and As
C和As共掺杂的γ-Si3N4
2) Si3N4 doping
Si3N4掺杂
3) Mn and N co-doping
Mn和N共掺杂
4) C-N co-doped titanium dioxide
C-N共掺杂二氧化钛
5) γ-Si_3N_4
γ-Si3N4
1.
The electronic structures and optical properties, the atomic population, bond lengths, band structures and density of states (DOS) of undoped and doped rare earth elements (Y, La) in γ-Si_3N_4 have been calculated by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA).
采用基于密度泛函的平面赝势方法(PWP)和广义梯度近似(GGA),计算了未掺杂和掺杂稀土(Y,La)的γ-Si3N4中N-Y(La)键的布居值和它们的键长、掺杂后能带结构和态密度。
2.
Based on the calculations, we analyzed the influence of pressure on the optical and mechanical properties γ-Si_3N_4, which indicates that γ-Si_3N_4 is quite suitable for applications under high pressure.
采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91),计算了不同压强下γ-Si3N4的电子结构、光学性质和力学性质。
6) carbon doping
C掺杂
1.
The mechanism,material property and the effect of carbon doping on the high power laser diodes were analyzed.
利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条