1) threading dislocation density
穿透位错密度
1.
15 arcsec and the threading dislocation density is 107cm-2,which indicates that the thick GaN films have the high quality,and are suitable for free-standing GaN substrates.
15arcsec,穿透位错密度(TDD)为107cm-2,外延生长的GaN厚膜晶体质量较好,可以作为自支撑GaN衬底。
2) threading dislocation
穿透位错
1.
Profile-fitting analyses indicate that the annealed ones have larger full widths at half maximum of (0002) rocking curve and lower densities of screw-type threading dislocations than the as-grown samples.
通过对各个样品的(0002)面摇摆曲线进行线形拟合及分析,发现虽然退火后摇摆曲线的半峰宽变大,但面外倾斜角(tilt)的值却变小,从而螺型穿透位错(TD)密度变小,这与化学腐蚀实验的结果一致。
2.
Even though threading dislocations in GaN epitaxial layers have been demonstrated to be effective nonradiative recombination centers,the CL band edge peak intensity does not decrease as the dislocation density increases.
结果表明,GaN外延层中的穿透位错是材料有效的非辐射复合中心,但GaN的CL带边峰强度并不随位错密度的增加而减少。
3) threading dislocation pairs
穿透位错对
4) Dislocation density
位错密度
1.
Investigation on dislocation density of SiGe alloy grown by MBE;
分子束外延生长SiGe合金中位错密度的研究
2.
Determination of the kinetics for dynamic recrystallization based on dislocation density variation
基于位错密度变化的动态再结晶动力学确定方法
3.
The basic theories and the applications of both the critical resolved shear stress model and visco-plastic model are presented for predicting the dislocation density during crystal growth process.
与熔体不润湿、与晶体热膨胀系数相近的坩埚材料,低位错密度的籽晶可有效地抑制生长晶体的位错密度;固液界面的形状及晶体内的温度梯度是降低位错密度的关键控制因素,而两因素又受到炉膛温度梯度、长晶速率、气体和熔体对流等晶体生长工艺参数的影响。
5) density of dislocation
错位密度
6) threading dislocations(TDs) density
线位错密度
补充资料：穿透
1.贯通。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条