1) class C power amplifier
C类功率放大器
1.
To overcome the problems, a class C power amplifier was designed and the circle transmitting antenna was improved in the transmitter,while a steady electric charge pump circuit and a low power consuming processor PIC16LF877A were adopted in the receiver.
针对无源感应数据传输系统工作环境中金属涡流损耗大、接收天线尺寸小等条件造成的数据传输距离短的问题,在发射机中设计了C类功率放大器,对环形发射天线进行了改进,接收机中设计了稳定的升压电路,选用了低功耗的PIC16LF877A处理器,通过这些方法增大了数据传输的距离。
2) class-D power amplifier
D类功率放大器
1.
The feature, operating principle, development and application of class-D power amplifier are introduced.
介绍D类功率放大器的特点、工作原理、发展及应用。
3) class-E power amplifier
E类功率放大器
1.
The controller combines parallel amplification and drain modulation of the CMOS class-E power amplifier to provide high efficiency over a broad range of output powers.
结合射频E类功率放大器的结构特点,采用CMOS工艺,达到了在大的输出功率范围内保持持续稳定高效率的目的。
2.
Theoretically,Class-E power amplifier with 100% drain efficiency operates in a switched mode and has wide application potentials.
E类功率放大器是一种开关模式的功率放大器,理论上可以达到100%的漏极效率,具有广泛的应用前景。
3.
A design methodology,which could be used for a transmission-line implementation of a class-E power amplifier,is presented.
E类功率放大器作为开关模式放大器一种,其理想效率为100%。
4) class E power amplifier
E类功率放大器
1.
In order to improve both charge current and transfer efficiency via a lower coupling coefficient inductive link, class E power amplifier based on primary leakage inductance and compensat.
在低耦合系数条件下 ,通过基于初级漏感的E类功率放大器和次级漏感的补偿方法 ,提高电容充电电流和传输效率。
2.
18 μm CMOS technology,a novel power control circuit with low cost and high integration for Class E power amplifier was designed using indirect closed-loop.
18μm CMOS工艺,采用间接闭环控制方式,设计出一个适用于Class 1蓝牙E类功率放大器的低成本、高集成度输出功率控制电路。
5) Class D Power Amplifier
D类功率放大器
1.
The Analysis of Class D Power Amplifier s Efficiency Parameter;
D类功率放大器效率参数分析
2.
In this dissertation, first study on the basic principle of class D power amplifier and BiCMOS process.
文章首先详细研究了D类音频放大器和相关的BiCMOS的基本原理和结构,并在此基础上综合现阶段国内市场对D类功率放大器的需求,开发了基于0。
6) class AB power amplifier
AB类功率放大器
1.
The essay compares the output rate of class AB power amplifier with calss D s,and affirms the advantages of class D in high efficiency,and sums up its principle of work,and also carries on the design and analysis of class D power parameter.
分析比较了AB类功率放大器与D类功率放大器的输出率,肯定了D类功率放大器效率高的优点,总结了D类功率放大器的工作原理,并对D类功率参数进行了设计分
2.
These parameters extracted are used for a design of 1900MHz two-stage class AB power amplifier with very low quiescent power consumption.
采用模拟退火算法提取出异质结双极晶体管器件的大信号 Gum mel- Poon模型参数 ,利用所提取出的模型参数设计出具有很低静态功耗的 190 0 MHz两级 AB类功率放大器 。
3.
Design and Implementation of a High Linearity CMOS Class AB Power Amplifier;
文章主要分析了AB类功率放大器中的主要非线性源—栅源电容对电路性能的影响,并且使用了一个PMOS管并联的技术来补偿这种影响,最后利用这种技术,采用JAZZ0。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条